Abstract: A semiconductor device and method of fabricating a semiconductor device involves formation of a trench above a fin (e.g. a fin of a FinFET device) of the semiconductor device and formation of a multi-layer dielectric structure within the trench. The profile of the multi-layer dielectric structure can be controlled depending on the application to reduce shadowing effects and reduce cut failure risk, among other possible benefits. The multi-layer dielectric structure can include two layers, three layers, or any number of layers and can have a stepped profile, a linear profile, or any other type of profile.

Abstract: A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.

Abstract: A multi-stage adjustable double-person spring bed mattress structure including a bed tail pad, a fixed bed head pad, a bed face and a bed cover. Two pairs of U-shaped supporting frames are respectively oppositely passed through the clearances between the adjacent longitudinal springs under the metal rods near two lateral sides and the central portion. Two rotating devices are respectively disposed on opposite inner sides of rear ends of the connecting rods under the four U-shaped supporting frames. Two driving splines are passed through the central holes of the above members. When the driving spline is rotated by a rotary disk disposed on one side of the fixed bed pad and having an eccentrical handle, whereby the rotating tube is rotated and inclinedly moved up and down. An insertion seat having an insertion hole is connected on the center of the upper portion of the movable bed head pad, whereby two insertion legs of the pillow racks can be inserted in.