Abstract: A reference leak (10) includes a first substrate (20), a second substrate (40) disposed and bonded on the first substrate, and predetermined numbers of leak channels (14) defined in at least one of the first and second substrates. Oblique walls of the leak channels are formed by crystal planes of the at least one of the first and second substrates, the oblique walls thereby being aligned according to such crystal planes. A method for making a reference leak is also provided.

Abstract: A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.

Abstract: A silicon nanowire structure with controllable orientations is disclosed. The silicon nanowire structure includes a silicon wafer as a substrate having a crystal plane; a plurality of silicon nanowires extends from the silicon wafer along a plurality of oblique epitaxial <111> directions of the substrate. The silicon nanowires are in a form of single crystalline nanowires. The crystal plane can be one of a (100) crystal plane, a (110) crystal plane, and a (111) crystal plane. A method for growing the silicon nanowire structure is also disclosed. The silicon nanowire structures have potential applications in nanoscale photonics and/or electronic devices. The method uses a silicon wafer having a crystal plane as a substrate. By controlling a local concentration of silicon derived from SiCl4 vapor at the reaction zone, silicon nanowires with controlled orientations can be grown from the silicon wafer.

Abstract: A reference leak (10) includes a first substrate (20), a second substrate (40) disposed and bonded on the first substrate, and predetermined numbers of leak channels (14) defined in at least one of the first and second substrates. Oblique walls of the leak channels are formed by crystal planes of the at least one of the first and second substrates, the oblique walls thereby being aligned according to such crystal planes. A method for making a reference leak is also provided.

Abstract: A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.