Abstract: Provided is a photovoltaic device prepared with a semiconductor including a localized level or an intermediate band in a forbidden band and capable of improving the performance than before. The photovoltaic device includes a plurality of first layers made of a first semiconducting material and a plurality of second layers made of a second semiconducting material that is different from the first semiconducting material, wherein the second semiconducting material includes a localized level or intermediate band in a forbidden band, the first layers and the second layers are alternately laminated one by one, at least two of the second layers are each disposed between a pair of the first layers, and a thickness of each of the second layers is thinner than a thickness of four molecular layers of the first semiconducting material.

Abstract: Provided is a photovoltaic device prepared with a semiconductor including a localized level or an intermediate band in a forbidden band and capable of improving the performance than before. The photovoltaic device includes a plurality of first layers made of a first semiconducting material and a plurality of second layers made of a second semiconducting material that is different from the first semiconducting material, wherein the second semiconducting material includes a localized level or intermediate band in a forbidden band, the first layers and the second layers are alternately laminated one by one, at least two of the second layers are each disposed between a pair of the first layers, and a thickness of each of the second layers is thinner than a thickness of four molecular layers of the first semiconducting material.

Abstract: A method produces a semiconductor by conducting superimposed doping of a plurality of dopants in a semiconductor substrate, which includes evaporating a (2×n) structure by a first dopant and forming its thin line structure on the substrate, then bringing the semiconductor substrate to a temperature capable of epitaxial growth, vapor depositing a second or third or subsequent dopants above the semiconductor substrate where the first dopant has been deposited, then epitaxially growing a semiconductor crystal layer over the semiconductor substrate, subsequently forming a superimposed doping layer composed of the first, second, or the third or subsequent dopants in the semiconductor substrate, and applying an annealing treatment to the superimposed doping layer at a high temperature, thereby activating the plurality of dopants electrically or optically. Superimposed doping of a plurality kinds of elements as dopants is performed to a predetermined depth in the case of an elemental semiconductor.

Abstract: A method for producing a semiconductor by conducting superimposed doping of a plurality of dopants in a semiconductor substrate, which includes evaporating a (2×n) structure by a first dopant and forming its thin line structure on the substrate, then bringing the semiconductor substrate to a temperature capable of epitaxial growth, vapor depositing a second or third or subsequent dopants above the semiconductor substrate where the first dopant has been deposited, then epitaxially growing a semiconductor crystal layer over the semiconductor substrate, subsequently forming a superimposed doping layer composed of the first, second, or the third or subsequent dopants in the semiconductor substrate, and applying an annealing treatment to the superimposed doping layer at a high temperature, thereby activating the plurality of dopants electrically or optically.