Patents by Inventor Shui-Jinn WANG

Shui-Jinn WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150022327
    Abstract: An externally triggered memory type liquid crystal thin film is provided with a wireless communication module including first and second driver units wherein a current is generated in the second driver unit when a distance between the first driver unit and the second driver unit is equal to or less than a predetermined value; and a light adjustment module including a first conduction layer electrically connected to a first terminal of the second driver unit so that the second driver unit supplies the current to the first conduction layer, a second conduction layer electrically connected to a second terminal of the second driver unit, and a liquid crystal layer formed between the first and second conduction layers so that an electric field is generated in the liquid crystal layer by both the first and second conduction layers.
    Type: Application
    Filed: March 10, 2014
    Publication date: January 22, 2015
    Applicant: Chung Hua University
    Inventors: Chien-Hung Wu, Li Fu Teng, Shui Jinn Wang, Kow Ming Chang
  • Patent number: 8551869
    Abstract: A method for roughening an epitaxy structure layer, including: providing an epitaxy structure layer; and etching a surface of the epitaxy structure layer by an excimer laser having an energy density of 1000 mJ/cm2 or less to form a roughened surface. In addition, a method for manufacturing a light-emitting diode having a roughened surface is provided.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: October 8, 2013
    Assignee: National Cheng Kung University
    Inventors: Shui-Jinn Wang, Wei-Chi Lee
  • Publication number: 20120214267
    Abstract: The present invention relates to a novel method for roughening an epitaxy structure layer, including: providing an epitaxy structure layer; and etching a surface of the epitaxy structure layer by an excimer laser having an energy density of 1000 mJ/cm2 or less to form a roughened surface. In addition, the present invention further provides a method for manufacturing a light-emitting diode having a roughened surface. Accordingly, the present invention can resolve the conventional problems of process complexity, time consumption and high cost.
    Type: Application
    Filed: June 21, 2011
    Publication date: August 23, 2012
    Applicant: National Cheng Kung University
    Inventors: Shui-Jinn WANG, Wei-Chi Lee
  • Publication number: 20110033974
    Abstract: A method for fabricating a hollow nanotube structure is disclosed. The method includes the steps of providing a substrate, developing a plurality of nanowires on the substrate with a predetermined size on the seed layer at relatively low temperature by a hydro-thermal growth method, forming an outer covering layer on the surfaces of the nanowires, selectively etching an upper end of the outer coating layer to expose an upper end of the nanowires and removing the nanowires to remain the hollow outer coating layer to form a plurality of hollow nanotubes. The method can simplify the nanotube manufacturing process, increase the dimension precision of the nanotubes and enhance the photoelectric properties of micro-electro-mechanical elements.
    Type: Application
    Filed: August 6, 2010
    Publication date: February 10, 2011
    Inventors: Shui-Jinn WANG, Der-Ming Kuo, Wei-Chih Isai, Chih-Ren Tseng