Patents by Inventor Shuichi Age

Shuichi Age has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing high purity/low chlorine content silicon by feeding chlorosilane into a fluidized bed of silicon particles
    Patent number: 5077028
    Abstract: A method of manufacturing high-purity silicon crystals, which comprises depositing silicon on the surface of high-purity silicon particles, while feeding into a fluidized bed reactor at a high temperature a material gas consisting of high purity chlorosilane and a diluting gas, said method having a silicon deposition rate in excess of about 0.4 .mu.m/min.
    Type: Grant
    Filed: March 6, 1990
    Date of Patent: December 31, 1991
    Assignee: Osaka Titanium Co., Ltd.
    Inventor: Shuichi Age