Abstract: A technique is presented for further reducing on-resistance (or on-voltage) in a vertical semiconductor device provided with a carrier shielding layer. A semiconductor substrate 20 of a semiconductor device 10 comprises a channel section 10A and a non-channel section 10B. An emitter region 26 is formed in the channel section 10A, this emitter region 26 making contact with a side surface of a trench gate 30 and being electrically connected to an emitter electrode 28. The emitter region 26 is not formed in a body region 25 of the non-channel section 10B. In a plan view, an occupied area ratio of the area which a carrier shielding layer 52 located in the non-channel section 10B occupies within the non-channel section 10B is larger than an occupied area ratio of the area which the carrier shielding layer 52 located in the channel section 10A occupies within the channel section 10A.

Abstract: A resin bonded rare earth magnet, compression molded from rare earth-transition alloy powder and thermosetting resin, having a magnet 1 comprising a mixture of thermosetting resin and rare earth-transition alloy powder with a particle size of between 20 and 300 microns, a filling material 3 with particle size between 0.1 and 15 microns which is used to fill in the depressions 2 on the surface of said magnet 1 and is then fixed with said thermosetting resin, and a corrosion inhibiting coat 4 made from synthetic resin applied to the surface of said magnet 1 which has been rendered smooth by the application of said filling material into the depressions on its surface.

Abstract: An image forming apparatus has an image forming carrier, an image forming portion that forms an image on the image forming carrier, an intermediate transfer medium to which the image on the image forming carrier is primarily transferred, and a transfer portion that secondarily transfers to a recording medium the image primarily transferred to the intermediate transfer medium. An area where the image forming carrier and the intermediate transfer medium are opposed includes a primary transfer area where the image on the image forming carrier is transferred to the intermediate transfer medium and a secondary transfer area where the image on the intermediate transfer medium is transferred to the recording medium.

Abstract: A resin bonded rare earth magnet, compression molded from rare earth-transition alloy powder and thermosetting resin, having a magnet body 1 comprising a mixture of thermosetting resin and rare earth-transition alloy powder with a particle size of between 20 and 300 microns, a filling material 3 with particle size between 0.1 and 15 microns which is used to fill in the depressions 2 on the surface of said magnet 1 and is then fixed with said thermosetting resin, and a corrosion inhibiting coat 4 made from synthetic resin applied to the surface of said magnet 1 which has been rendered smooth by the application of said filling material into the depressions on its surface.

Abstract: The attempt is to improve the light utilization effect by concentrating and irradiating the light on the observation area, and at the same time, to be able to simply wipe the end clean even when dirtied by oil. Optical fiber light guide 7 for illumination is arranged concentrically on the peripheral part of image incident end part 6 in of image guide 6 that has been inserted inside of pipe 2; that light exit end part 7 out is arranged closer to objective lens 3 than the focal point position of objective lens 3.

Abstract: A semiconductor device includes first and second oxide film regions formed on a surface of a semiconductor substrate. A first impurity diffusion region is located at a distance from one of the first and second oxide regions. A second impurity diffusion region is located along the surface of the semiconductor substrate and partially overlaps the first impurity diffusion region. The width of the second impurity diffusion region is greater than that of the first impurity diffusion region. A contact hole is provided extending substantially over the second impurity diffusion region. The contact hole has a first side wall defined by one of the first and second oxide film regions and a second side wall defined by an insulating film. The width of the opening of the contact hole is greater than or equal to the width of the first impurity diffusion region. A conductive film is formed along the bottom portion and along the opposite side walls of the contact hole.

Abstract: A semiconductor device includes first and second oxide film regions formed on a surface of a semiconductor substrate. A first impurity diffusion region is located at a distance from one of the first and second oxide regions. A second impurity diffusion region is located along the surface of the semiconductor substrate and partially overlaps the first impurity diffusion region. The width of the second impurity diffusion region is greater than that of the first impurity diffusion region. A contact hole is provided extending substantially over the second impurity diffusion region. The contact hole has a first side wall defined by one of the first and second oxide film regions and a second side wall defined by an insulating film. The width of the opening of the contact hole is greater than or equal to the width of the first impurity diffusion region. A conductive film is formed along the bottom portion and along the opposite side walls of the contact hole.