Abstract: A press machine 10 includes a die 12 with a through hole 12a that defines a cavity, a first press surface 14a and a second press surface 16a for pressing a magnetic powder 18 loaded in the cavity, and magnetic field generating means for applying an aligning magnetic field to the magnetic powder 18 in the cavity. At least one of the first and second press surfaces 14a and 16a has a region made of a material having a Vickers hardness that is higher than 200 but equal to or lower than 450. In pressing the powder under the aligning magnetic field, the press machine 10 minimizes the disturbance in the orientation of the powder.

Abstract: A press machine 10 includes a die 12 with a through hole 12a that defines a cavity, a first press surface 14a and a second press surface 16a for pressing a magnetic powder 18 loaded in the cavity, and magnetic field generating means for applying an aligning magnetic field to the magnetic powder 18 in the cavity. At least one of the first and second press surfaces 14a and 16a has a region made of a material having a Vickers hardness that is higher than 200 but equal to or lower than 450. In pressing the powder under the aligning magnetic field, the press machine 10 minimizes the disturbance in the orientation of the powder.

Abstract: A press machine 10 includes a die 12 with a through hole 12a that defines a cavity, a first press surface 14a and a second press surface 16a for pressing a magnetic powder 18 loaded in the cavity, and magnetic field generating means for applying an aligning magnetic field to the magnetic powder 18 in the cavity. At least one of the first and second press surfaces 14a and 16a has a region made of a material having a Vickers hardness that is higher than 200 but equal to or lower than 450. In pressing the powder under the aligning magnetic field, the press machine 10 minimizes the disturbance in the orientation of the powder.

Abstract: A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

Abstract: A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

Abstract: There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses.

Abstract: There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses. The plating liquid contains divalent copper ions and a completing agent, and an optional pH adjusting agent.

Abstract: There is provided a copper-plating solution which, when used in plating of a substrate having an seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and ensures complete filling with copper of the fine recesses, and which is so stable that its performance is not lowered after a long-term continuous use thereof. The plating solution contains monovalent or divalent copper ions, a complexing agent, and an organic sulfur compound as an additive, and optionally a surfactant.

Abstract: The present invention provides a powder compacting apparatus including: a die having a through hole forming a cavity; a first punch and a second punch for pressing a rare-earth alloy magnetic powder filled in the cavity; and a magnetic field generator for applying an orientation magnetic field parallel to a pressing direction through the rare-earth alloy magnetic powder in the cavity, wherein at least one of the first and second punches and has a curved pressing surface, and the pressing surface is given a shape such as to suppress the movement of particles of the rare-earth alloy magnetic powder along the pressing surface during the pressing step.

Abstract: The present invention provides an electroless plating liquid which allows a plating rate to be controlled, is not largely influential on semiconductor characteristics, and poses no problem on the health of workers, and a method of forming an interconnection according to a electroless plating process which uses such an electroless plating liquid. The electroless copper plating liquid contains dihydric copper ions, a complexing agent, an aldehyde acid, and an organic alkali. The electroless copper plating liquid is preferably be used in a method having the steps of forming an auxiliary seed layer for reinforcing a copper seed layer in an interconnection groove defined in a surface of a semiconductor device, and performing an electrolytic plating process using the seed layer including the auxiliary seed layer as a current feeding layer, for thereby filling copper in the interconnection groove defined in the surface of the semiconductor device.

Abstract: There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses.

Abstract: A rare-earth alloy powder pressing apparatus comprises a die. The die includes a die main body. The die main body includes a through hole for formation of a cavity, and an auxiliary yoke. A rare-earth alloy powder is fed into the cavity. A correcting yoke is disposed near the die, on a side from which a compact is taken out, and an orienting magnetic field is applied. At this time, the correcting yoke is disposed on an upper side of the die if the compact is to be taken out from the upper side of the die whereas the correcting yoke is disposed on a lower side of the die if the compact is to be taken out from the lower side of the die, an inward side surface of the correcting yoke and an inward side surface of the auxiliary yoke are made flush with a plane vertical to a direction in which the orienting magnetic field is applied, and the correcting yoke is urged toward the die. Then, the rare-earth alloy powder is pressed by an upper punch and a lower punch to form a compact.

Abstract: The present invention provides a powder compacting apparatus including: a die having a through hole forming a cavity; a first punch and a second punch for pressing a rare-earth alloy magnetic powder filled in the cavity; and a magnetic field generator for applying an orientation magnetic field parallel to a pressing direction through the rare-earth alloy magnetic powder in the cavity, wherein at least one of the first and second punches and has a curved pressing surface, and the pressing surface is given a shape such as to suppress the movement of particles of the rare-earth alloy magnetic powder along the pressing surface during the pressing step.