Abstract: A method for reducing carbon dioxide is provided. In the present method, used is an anode electrode comprises a stacked structure of a photoelectric conversion layer, a metal layer, and an InxGa1-xN layer (where 0<x?1). The InxGa1-xN layer is of i-type or n-type. The metal layer is interposed between the photoelectric conversion layer and the InxGa1-xN layer. When irradiating the anode electrode with light, a first light part included in the light is absorbed by the InxGa1-xN layer and a second light part included in the light travels through the InxGa1-xN layer. The second light part is absorbed by the photoelectric conversion layer to generate electric power in the photoelectric conversion layer. The second light part has a longer wavelength than the first light part. The carbon dioxide contained in the first electrolyte solution is reduced on the cathode electrode.

Abstract: A method for reducing carbon dioxide is provided. In the present method, used is an anode electrode comprises a stacked structure of a photoelectric conversion layer, a metal layer, and an InxGa1-xN layer (where 0<x?1). The InxGa1-xN layer is of i-type or n-type. The metal layer is interposed between the photoelectric conversion layer and the InxGa1-xN layer. When irradiating the anode electrode with light, a first light part included in the light is absorbed by the InxGa1-xN layer and a second light part included in the light travels through the InxGa1-xN layer. The second light part is absorbed by the photoelectric conversion layer to generate electric power in the photoelectric conversion layer. The second light part has a longer wavelength than the first light part. The carbon dioxide contained in the first electrolyte solution is reduced on the cathode electrode.

Abstract: A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by introducing the sources of p-type dopant, nitrogen and Group III sources on a substrate held at a temperature of 600° C. or higher and a cooling process for cooling the substrate which is bearing the p-type nitride semiconductor layer. The manufacturing method features in that the hole carrier concentration of the p-type nitride semiconductor layer decreases during the cooling process. A superior quality p-type nitride semiconductor is made available, without needing any annealing treatment after growth, by properly specifying the concentration of atmosphere gas and the cooling time.

Abstract: A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by introducing the sources of p-type dopant, nitrogen and Group III sources on a substrate held at a temperature of 600° C. or higher and a cooling process for cooling the substrate which is bearing the p-type nitride semiconductor layer. The manufacturing method features in that the hole carrier concentration of the p-type nitride semiconductor layer decreases during the cooling process. A superior quality p-type nitride semiconductor is made available, without needing any annealing treatment after growth, by properly specifying the concentration of atmosphere gas and the cooling time.