Abstract: Memory card includes a circuit board, a component mounted on a main face of the circuit board, casing covering at least the main face of the circuit board and the component, and bittering agent retained in a roughened area provided on casing or an exposed part of the circuit board.

Abstract: A surface-mounting type electronic circuit unit includes pedestal bases. The pedestal bases are attached to first lands provided on the bottom surface of an insulating substrate and are made of plate-shaped metal material having a solder film on the outer surface thereof. Solder bumps are provided on second lands. Since the pedestal bases used as the mounting reference of the insulating substrate is formed in a plate shape and is placed on the same plane as the first lands and the mother board, the contact state between the first lands a the mother board is effectively stabilized. In addition, since the solderable amount is more than that of a conventional invention, the solder is not detached due to an impact.

Abstract: A circuit board according to the present invention is so formed that an extension pattern not covered with an insulating film is provided at a NC land that does not allow an electric signal to pass therethrough, so as to have a configuration equivalent to that of a pattern not covered with the sulating film and provided at a land that allows the electric signal to pass therethrough. Accordingly, the NC land may have an exposed surface area equivalent to that of the land. Therefore, when a semiconductor component is soldered using solders, bumps of the solders at the NC land and at the land may be evenly formed, thereby providing coplanarity of the solders, and increasing soldering reliability for the semiconductor component.

Abstract: A surface-mounting type electronic circuit unit includes pedestal bases. The pedestal bases are attached to first lands provided on the bottom surface of an insulating substrate and are made of plate-shaped metal material having a solder film on the outer surface thereof. Solder bumps are provided on second lands. Since the pedestal bases used as the mounting reference of the insulating substrate is formed in a plate shape and is placed on the same plane as the first lands and the mother board, the contact state between the first lands a the mother board is effectively stabilized. In addition, since the solderable amount is more than that of a conventional invention, the solder is not detached due to an impact.

Abstract: The present invention provides a CVD-SiC self-supporting membrane structure having a plurality of SiC layers laminated by a CVD method, wherein a layer A having a peak intensity (height) ratio r=&bgr;(220)/&bgr;(111) of &bgr; (220) peak to &bgr; (111) peak intensities of the X-ray diffracted beams in a thickness direction being 0.1 or more, and a layer B having a peak intensity ratio r of 0.01 or less are laminated alternately and repeatedly, and the layer A is laid on either side in the thickness direction.

Abstract: The present invention provides a CVD-SiC self-supporting membrane structure having a plurality of SiC layers laminated by a CVD method, wherein a layer A having a peak intensity (height) ratio r=&bgr;(220)/&bgr;(111) of &bgr;(220) peak to &bgr;(111) peak intensities of the X-ray diffracted beams in a thickness direction being 0.1 or more, and a layer B having a peak intensity ratio r of 0.01 or less are laminated alternately and repeatedly, and the layer A is laid on either side in the thickness direction.

Abstract: A vertical wafer boat in which a ceramic film is prevented from being peeled off and which has a long useful life is provided. Front and rear sets each consisting of two support rods 4 which are bilaterally symmetrically arranged are respectively disposed in front and rear sides between upper and lower plates 1 and 2. A number of wafer mount groove portions 3 are formed in the support rods. The plates and the support rods are made of a ceramic base material, and the surfaces are covered by a high-purity ceramic film. At least wafer mount groove portions of front right and left support rods of the front set are located in front of a center line which is perpendicular to an insertion direction of semiconductor wafers which are to be mounted on the wafer mount groove portions. Horizontal sections of the wafer mount groove portions of the support rods have a polygonal shape which does not have an acute angle of 90.degree. or less.

Abstract: A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.

Abstract: In a die for molding a glass member, a ceramic die for glass molding characterized by having the press surfaces thereof formed of a boron type composite ceramics comprising (A) at least one M.sup.I B ceramic phase having a B.sup.I /B (wherein M.sup.I stands for at least one member selected from the group consisting of Ni, Cr, V, Nb, Ta, Mo, W and Mn) atomic ratio of 1/1 and (B) at least one IV-group diboride ceramic phase selected from the group consisting of TiB.sub.2, ZrB.sub.2, and HfB.sub.2 and/or (Cr, Ni).sub.3 B.sub.4 ceramic phase. This glass molding die excels in durability, ability of mold release, molding accuracy, and productivity and, at the same time, fits the molding of any of a rich variety of species of glass.

Abstract: A method of forming a ceramic layer, which is compact and rich in adhesion to a metallic body, on the metallic body without adding binders even though said ceramics is hard to be sintered ceramics such as various kinds of non oxide ceramics. Said method comprises a step of placing ceramic powders and/or a mixture of ceramic powders and metallic powders or a mixture of metallic powders and non metallic powders on the metallic body and a step of forming the ceramic layer on the metallic body in a moment by a reaction heat of the Thermit.RTM. reaction under the pressurized condition. In addition, a metallic insert member can be disposed between said metallic body and various kinds of powder placed on said metallic body. Furthermore, the resulting ceramic/metal composite member is subjected to a hot hydrostatic pressing or a hot pressing under high temperatures and high pressures.

Abstract: In a method of manufacturing a sintered ceramic material using the heat generated in a thermit reaction as a heating source, a pre-heating is applied preceding to the sintering step or a mixture comprising: (A) at least one ceramic powder, (B) at least one non-metallic powder selected from the group consisting of carbon, boron and silicon, and (C) a metal powder and/or a non-metallic powder other than the above-mentioned (B) is used. Homogeneous and dense sintered ceramic material or sintered composite ceramic material can be obtained by this method, and the fine texture thereof, and the phase constitution, the phase distribution and the like of the composite ceramic phase can be controlled sufficiently.

Abstract: A method for sintering a metal powder, a ceramic powder, or a mixture thereof accomplishes compact sintering of even a high melting substance by heating the powder at an elevated temperature for a short time under not less than 10,000 atmospheres of pressure. To attain the quick high-temperature heating under the ultrahigh pressure, a Thermit reaction is generated in an ultrahigh pressure generating apparatus which is provided with a gasket made of pyrophyllite and cylinders and anvils protected with heat insulators.For the purpose of preventing the Thermit reaction from inducing a reaction between the Thermit composition and the powder under treatment and the heater and ensuring electrical insulation of these components, barriers made of hexagonal boron nitride and/or tantalum are suitably disposed within the apparatus.

Abstract: A swinging door carries at its bottom end a pair of parallel spaced rollers which extend substantially the full width of the door and which, when the door is closed, are spring energized into rolling engagement with the bottom transverse member of a doorframe or sill for soundproofing the bottom of the door. A pair of horizontally elongated rubber strips, suspended from the door, rest on the respective rollers in order to obstruct the passage of sound above the rollers.