Abstract: An object of the present disclosure is to enable a warning to be issued to a person who is highly likely to be put in danger at a risky point. In an information processing apparatus, a controller acquires information indicating a risky point, acquires a state of a person with a predetermined positional relationship to the risky point, and determines whether or not the state of the person is a state where there is a high possibility of being put in danger, among a plurality of states of the person assumable at the risky point. Furthermore, in a case where the state of the person is determined to be the state where there is a high possibility of being put in danger, the controller causes an output unit to output information indicating a warning.

Abstract: A magnetic sensor capable of preventing degradation of magnetic measurement accuracy is obtained. The magnetic sensor includes a first sensor portion, a second sensor portion, and a connection portion. The first sensor portion extends in a first direction. The second sensor portion is disposed at an interval from the first sensor portion in a second direction orthogonal to the first direction. The first sensor portion includes a first end and a second end that are ends in the first direction. The second sensor portion includes a third end and a fourth end that are ends in the first direction. The connection portion connects the second end and the third end. The first sensor portion, the second sensor portion, and the connection portion are constituted of a multilayer body of a magnetic sensor element and a magnet. The magnet applies a bias magnetic field to the magnetic sensor element.

Abstract: In a current detection apparatus, one or more first plate portions, one or more second plate portions, and one or more third plate portions of one or more magnetic shields are opposed to side surfaces of the one or more protrusions. The one or more protrusions, the one or more magnetic field detection elements, and one or more conductive members are respectively surrounded by the one or more magnetic shields, respectively. Consequently, the current detection apparatus is downsized and has high current detection accuracy.

Abstract: In the electric power converting apparatus, an electric current sensor that measures an electric current that flows through a busbar includes: a magnetic flux concentrating core that has a first end portion and a second end portion that face each other so as to have a measuring space interposed; and a magnetoelectric transducer that has a magnetically sensitive portion that is disposed in the measuring space. The magnetoelectric transducer generates a signal in response to a magnitude of a magnetic field that is sensed by the magnetically sensitive portion. Where a core opening direction of the magnetic flux concentrating core is a direction that is directed from the busbar, through the measuring space, and outward from the magnetic flux concentrating core, a direction of the magnetic leakage field at the electric reactor is a direction that is different than the core opening direction.

Abstract: In the electric power converting apparatus, an electric current sensor that measures an electric current that flows through a busbar includes: a magnetic flux concentrating core that has a first end portion and a second end portion that face each other so as to have a measuring space interposed; and a magnetoelectric transducer that has a magnetically sensitive portion that is disposed in the measuring space. The magnetoelectric transducer generates a signal in response to a magnitude of a magnetic field that is sensed by the magnetically sensitive portion. Where a core opening direction of the magnetic flux concentrating core is a direction that is directed from the busbar, through the measuring space, and outward from the magnetic flux concentrating core, a direction of the magnetic leakage field at the electric reactor is a direction that is different than the core opening direction.

Abstract: In a current detection apparatus, one or more first plate portions, one or more second plate portions, and one or more third plate portions of one or more magnetic shields are opposed to side surfaces of the one or more protrusions. The one or more protrusions, the one or more magnetic field detection elements, and one or more conductive members are respectively surrounded by the one or more magnetic shields, respectively. Consequently, the current detection apparatus is downsized and has high current detection accuracy.

Abstract: The epoxy resin curing agent of the present invention comprises a compound represented by the following formula (1): wherein R represents a methyl group, an ethyl group, or a hydroxyl group, and n is an integer of 1 to 3.

Abstract: The epoxy resin curing agent of the present invention comprises a compound represented by the following formula (1): wherein R represents a methyl group, an ethyl group, or a hydroxyl group, and n is an integer of 1 to 3.

Abstract: Provided are an epoxy resin composition including acid anhydrides (A) and epoxy resins (B), in which: (a) cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride accounts for 50 to 90 mass % of the acid anhydrides (A); (b) an alicyclic epoxy resin compound accounts for 30 to 90 mass % of the epoxy resins (B) and an epoxy resin compound represented by the following general formula (1) accounts for 10 to 50 mass % of the epoxy resins (B); and (c) contents of the acid anhydrides (A) and the epoxy resins (B) are such that a blending equivalent ratio between the acid anhydrides and the epoxy resins ranges from 0.4 to 0.7, a cured product of the composition, and a light-emitting diode. The epoxy resin composition has the following characteristics.

Abstract: A thermosetting resin composition which includes an epoxy-containing component and a curing agent component containing a cyclohexanetricarboxylic anhydride. The cured product of the thermosetting resin composition is excellent in surface hardness, solvent resistance, transparency, and adhesion to substrate, and is useful as a surface protection layer of the substrate.

Abstract: Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode.

Abstract: A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

Abstract: A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

Abstract: There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

Abstract: A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

Abstract: A thermosetting resin composition which includes an epoxy-containing component and a curing agent component containing a cyclohexanetricarboxylic anhydride. The cured product of the thermosetting resin composition is excellent in surface hardness, solvent resistance, transparency, and adhesion to substrate, and is useful as a surface protection layer of the substrate.

Abstract: A magnetic memory device is provided in which, even when a recording layer having an asymmetric shape and a local via are formed over a strap wiring with a sufficient distance allowed therebetween, increase in the size of the magnetic memory device can be suppressed. The magnetic memory device includes the strap wiring, the local via, and a magnetic recording element (TMR element). The TMR element includes a fixed layer and the recording layer. The planar shape of the recording layer is asymmetric with respect to the direction of the easy magnetization axis of the recording layer and is symmetric with respect to the axis of symmetry perpendicular to the easy magnetization axis. The contoured portion of the recording layer on the side closer to the center of area of the recording layer is opposed to the local via formation side.

Abstract: The present invention provides an acid anhydride ester obtained by esterifying cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride and a composition of the ester, and a heat-curable resin composition and a cured product of the composition. _Provided is an epoxy resin composition using the acid anhydride ester as a curing agent for an epoxy resin, the epoxy resin composition having, for example, the following properties (1), (2), and (3): (1) the epoxy resin composition has a low viscosity at room temperature, so the components of the composition can be favorably blended with each other, (2) the acid anhydride ester has a low vapor pressure at curing temperature, so no evaporation loss occurs after curing, and the intended design of blend is capable, and (3) a cured product to be made from the composition is colorless and transparent, and changes its color to a small extent even when the product is irradiated with light or heated for a long time period.

Abstract: There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

Abstract: The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO2 is formed.