Patents by Inventor Shuji Asano

Shuji Asano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128309
    Abstract: A signal transmission device having a capacitor coupler includes a semiconductor substrate, a low voltage circuit region, an insulating film formed on the semiconductor substrate, a lower electrode formed on the semiconductor substrate via the insulating film, and an upper electrode disposed opposite to the lower electrode via the insulating film interposed therebetween. A shield portion includes a conductor to which a low voltage is applied is provided between the lower electrode and the upper electrode and the low voltage circuit region. When a stacking direction of the lower electrode and the upper electrode is defined as a height direction, the shield portion is located higher than the low voltage circuit region and has an eaves part extending on an opposite side with respect to the lower electrode and the upper electrode.
    Type: Application
    Filed: December 22, 2023
    Publication date: April 18, 2024
    Inventors: Shuji ASANO, Koichi YAKO, Akira YAMADA
  • Publication number: 20210119001
    Abstract: A semiconductor device includes: a semiconductor substrate including a support substrate, a buried insulating film, and an active layer stacked in the stated order; a trench isolation portion disposed in the active layer and dividing the active layer into a plurality of regions including an extracting region; and a contact electrode disposed in a through hole that is provided from a main surface of the semiconductor substrate to reach the support substrate in the extracting region, and electrically connected to the support substrate. A minimum width of a portion of the contact electrode being in contact with the support substrate is wider than a minimum width of a portion of the contact electrode located in the active layer.
    Type: Application
    Filed: December 30, 2020
    Publication date: April 22, 2021
    Inventors: EISUKE BANNO, SHUJI ASANO, SEIJI NOMA, SHINICHIRO UEYAMA
  • Patent number: 5788720
    Abstract: An alkaline storage battery configured with an improved nickel positive electrode plate having a high capacity density and a high utilization of the active material is disclosed. The nickel positive electrode plate comprises a porous metal plaque, a first layer of nickel hydroxide loaded in close proximity to inner surfaces of pores of the porous metal plaque, and a second layer of nickel hydroxide loaded over the first layer. The nickel hydroxide in the second layer has a larger particle diameter than that in the first layer, and the amount of the nickel hydroxide in the second layer occupies a majority of the total amount of the active material filled in the positive electrode.
    Type: Grant
    Filed: August 28, 1997
    Date of Patent: August 4, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shuji Asano, Yasutaka Noguchi, Ryoji Tsuboi
  • Patent number: 5718988
    Abstract: An alkaline storage battery configured with an improved nickel positive electrode plate having a high capacity density and a high utilization of the active material is disclosed. The nickel positive electrode plate comprises a porous metal plaque, a first layer of nickel hydroxide loaded in close proximity to inner surfaces of pores of the porous metal plaque, and a second layer of nickel hydroxide loaded over the first layer. The nickel hydroxide in the second layer has a larger particle diameter than that in the first layer, and the amount of the nickel hydroxide in the second layer occupies a majority of the total amount of the active material filled in the positive electrode.
    Type: Grant
    Filed: December 2, 1996
    Date of Patent: February 17, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shuji Asano, Yasutaka Noguchi, Ryoji Tsuboi