Abstract: A manufacturing apparatus includes a first supporting section to support a first tape section. The first tape section has a first surface facing away from the first supporting section. For example, a semiconductor chip can be disposed on the first surface. A second supporting section of the apparatus supports a second tape section in a facing arrangement with the first tape section. The second tape section has a second surface facing away from the second supporting section. For example, a semiconductor chip can be transferred from the first surface to the second surface in a manufacturing process. A ring element is between the first and second tape sections and surrounds a space between the first and second tape sections. The ring element has a port allowing fluid communication between the space and an outlet port.

Abstract: A manufacturing apparatus includes a first supporting section to support a first tape section. The first tape section has a first surface facing away from the first supporting section. For example, a semiconductor chip can be disposed on the first surface. A second supporting section of the apparatus supports a second tape section in a facing arrangement with the first tape section. The second tape section has a second surface facing away from the second supporting section. For example, a semiconductor chip can be transferred from the first surface to the second surface in a manufacturing process. A ring element is between the first and second tape sections and surrounds a space between the first and second tape sections. The ring element has a port allowing fluid communication between the space and an outlet port.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; a p-side electrode; an n-side electrode; a first p-side pillar; a first n-side pillar; a first insulating layer; a fluorescer layer; a second insulating layer; a p-side interconnect; and an n-side interconnect. The second insulating layer is provided as one body in at least a portion of an outer side of a side surface of the first insulating layer and at least a portion of an outer side of a side surface of the fluorescer layer.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; a p-side electrode; an n-side electrode; a first p-side pillar; a first n-side pillar; a first insulating layer; a fluorescer layer; a second insulating layer; a p-side interconnect; and an n-side interconnect. The second insulating layer is provided as one body in at least a portion of an outer side of a side surface of the first insulating layer and at least a portion of an outer side of a side surface of the fluorescer layer.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer having a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, a light emitting layer, a first surface, and a second surface opposite to the first surface; an n-side electrode; a p-side electrode; a third layer; an insulating member; an n-side metal portion; and a p-side metal portion. The insulating member has a lower surface. A height of the lower surface is higher than a height of the first surface. The insulating member covers a periphery of the third layer, and has light reflectivity on at least a surface of a part adjacent to a side surface of the third layer.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface; a p-side electrode; an n-side electrode; a p-side pillar; an n-side pillar; a first insulating layer; an optical layer; a second insulating layer; a first layer; a p-side interconnect; and an n-side interconnect. The first layer includes a first lower end portion and a second lower end portion.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer having a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, a light emitting layer, a first surface, and a second surface opposite to the first surface; an n-side electrode; a p-side electrode; a third layer; an insulating member; an n-side metal portion; and a p-side metal portion. The insulating member has a lower surface. A height of the lower surface is higher than a height of the first surface. The insulating member covers a periphery of the third layer, and has light reflectivity on at least a surface of a part adjacent to a side surface of the third layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting element and a phosphor layer provided on the light emitting element. The phosphor layer includes a plurality of phosphor particles and a plurality of inorganic particles having smaller sizes than the phosphor particles. The phosphor particles are bound together with aggregation of the inorganic particles and the phosphor particles.

Abstract: A manufacturing apparatus includes a first supporting section to support a first tape section. The first tape section has a first surface facing away from the first supporting section. For example, a semiconductor chip can be disposed on the first surface. A second supporting section of the apparatus supports a second tape section in a facing arrangement with the first tape section. The second tape section has a second surface facing away from the second supporting section. For example, a semiconductor chip can be transferred from the first surface to the second surface in a manufacturing process. A ring element is between the first and second tape sections and surrounds a space between the first and second tape sections. The ring element has a port allowing fluid communication between the space and an outlet port.

Abstract: According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light-emitting device includes growing a semiconductor film including a group III nitride semiconductor on a silicon substrate, dividing the grown semiconductor film into a plurality of sections by selectively removing the semiconductor film, forming an aluminum film to cover the semiconductor film, removing the aluminum film selectively, oxidizing the remained aluminum film, and removing the silicon substrate.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes performing plasma processing of a stacked body. The stacked body has a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer. The plasma processing is performed on a surface of the stacked body where the second semiconductor layer is exposed such that the second semiconductor layer remains. The first semiconductor layer includes gallium and nitrogen. The second semiconductor layer includes aluminum and nitrogen. The method includes forming a plurality of protrusions by performing wet etching of the surface after the plasma processing is performed. At least a lower portion of the plurality of protrusions is made of the first semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor film, an electrode, a passivation film, a sealing resin body, and an intermediate film. The semiconductor film contains a Group III nitride semiconductor. The electrode is connected to a first surface of the semiconductor film. The passivation film covers an end surface of the semiconductor film and the first surface. The sealing resin body covers the first surface and a side surface of the electrode to leave a second surface of the semiconductor film exposed. The intermediate film is provided between the passivation film and the sealing resin body. The absolute value of the difference between an internal stress of the intermediate film and that of the sealing resin body is less than the absolute value of the difference between an internal stress of the passivation film and that of the sealing resin body.

Abstract: A semiconductor device is provided that includes a semiconductor layer and an electrode coupled to a semiconductor layer. The electrode includes first and second end portions, the first end portion being closer to the semiconductor layer than the second end portion. The first end portion is formed to have crystals of a first grain size, and the second end portion is formed to have crystals of a second grain size that is larger than the first grain size.

Abstract: A semiconductor light emitting element includes a stacked body, a metal reflection layer and a metal pad portion. The stacked body is made of InxGayAl1-x-yN (0?x?1, 0?y?1, x+y?1), has a first surface and a second surface on an opposite side of the first surface and includes a light emitting layer. The metal reflection layer is provided on the first surface of the stacked body, includes silver or a silver alloy and has a mesh-like structure. The metal pad portion is provided so as to cover the first surface of the stacked body exposed at an opening provided in the mesh-like structure and a surface of the metal reflection layer. Light emitted from the light emitting layer is emitted from the second surface side of the stacked body.

Abstract: According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode layer and a second electrode layer. The first semiconductor layer includes a first portion and a second portion thicker than the first portion. The second portion includes a side surface rising from a major surface of the first portion. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode layer is provided along the major surface of the first portion and is in contact with the side surface of the second portion. The second electrode layer is provided on the second semiconductor layer.

Abstract: A manufacturing method of a semiconductor device according to one embodiment includes attaching a front-side protecting member to a first main surface of a semiconductor wafer having an element region formed therein; laser-dicing the semiconductor wafer by applying a laser beam from a second main surface opposite to the first main surface of the semiconductor wafer; forming a backside metal film on the second main surface of the semiconductor wafer; and pressing a spherical surface against the front-side protecting member to expand the front-side protecting member and form individually divided semiconductor chips having the backside metal film attached thereto.

Abstract: A semiconductor light emitting device comprises: a substrate; a semiconductor stacked structure; a first electrode; a second electrode; and a reflective film. The substrate has a top face and a rear face electrode forming portion opposed thereto, and is translucent to light in a first wavelength band. The rear face electrode forming portion is surrounded by a rough surface. The semiconductor stacked structure is provided on the top face of the substrate and includes an active layer that emits light in the first wavelength band. The first electrode is provided on the semiconductor stacked structure, and the second electrode is provided on the rear face electrode forming portion. The reflective film is coated on at least a portion of the rough surface.

Abstract: A semiconductor light emitting device comprises: a substrate; a semiconductor stacked structure; a first electrode; a second electrode; and a reflective film. The substrate has a top face and a rear face electrode forming portion opposed thereto, and is translucent to light in a first wavelength band. The rear face electrode forming portion is surrounded by a rough surface. The semiconductor stacked structure is provided on the top face of the substrate and includes an active layer that emits light in the first wavelength band. The first electrode is provided on the semiconductor stacked structure, and the second electrode is provided on the rear face electrode forming portion. The reflective film is coated on at least a portion of the rough surface.