Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

Abstract: A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.

Abstract: A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.

Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.

Abstract: The present invention provides a hexagonal boron nitride (hBN) substrate with a monatomic layer step and a preparation method thereof, where a surface of the hBN substrate is cleaved to obtain a fresh cleavage plane, and then hBN is etched by using hydrogen at a high temperature to obtain a controllable and regular monatomic layer step. The present invention utilizes an anisotropic etching effect of hydrogen on the hBN and controls an etching rate and degree of the etching by adjusting a hydrogen proportion, the annealing temperature, and the annealing time, so as to achieve the objective of etching the regular monatomic layer step. The preparation process is compatible with the process of preparing graphene through a chemical vapor deposition (CVD) method, and is applicable to preparation of a graphene nanoribbon. The present invention is mainly applied to new graphene electronic devices.

Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.