Patents by Inventor Shumin Wang

Shumin Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of polishing using multi-oxidizer slurry
    Patent number: 6316366
    Abstract: A chemical mechanical polishing slurry precursor comprising urea, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry precursor to prepare a chemical mechanical polishing slurry with a first oxidizer and thereafter using the slurry to remove titanium, titanium nitride, and an aluminum alloy containing layers from a substrate.
    Type: Grant
    Filed: February 14, 2000
    Date of Patent: November 13, 2001
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic Kaufman, Shumin Wang
  • Chemical-mechanical polishing method
    Patent number: 6316365
    Abstract: The present invention provides a method for chemically-mechanically polishing a substrate comprising tantalum and a conductive metal (other than tantalum). The method comprises (a) applying to the substrate a conductive metal-selective polishing composition and a metal oxide abrasive, (b) selectively removing at least a portion of the conductive metal as compared to the tantalum from the substrate, (c) applying to the substrate a tantalum-selective polishing composition and a metal oxide abrasive, and (d) removing at least a portion of the tantalum as compared to the conductive metal from the substrate. In one embodiment, the conductive metal-selective polishing composition is any such polishing composition, and the tantalum-selective polishing composition comprises a persulfate compound and a passivation film-forming agent for the conductive metal.
    Type: Grant
    Filed: December 1, 2000
    Date of Patent: November 13, 2001
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shumin Wang, Homer Chou
  • CMP polishing pad including a solid catalyst
    Publication number: 20010036804
    Abstract: A polishing pad comprising a polishing pad substrate and at least one solid catalyst, the polishing pad being useful to remove metal layers from a substrate.
    Type: Application
    Filed: January 22, 2001
    Publication date: November 1, 2001
    Inventors: Brian L. Mueller, Shumin Wang
  • Chemical mechanical polishing slurry useful for copper substrates
    Patent number: 6309560
    Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: October 30, 2001
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
  • Chemical mechanical polishing slurry useful for copper/tantalum substrates
    Patent number: 6217416
    Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: April 17, 2001
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
  • CMP slurry containing a solid catalyst
    Patent number: 6177026
    Abstract: A chemical mechanical polishing composition comprising an oxidizing agent and at least one solid catalyst, the composition being useful when combined with an abrasive or with an abrasive pad to remove multiple metal layers from a substrate.
    Type: Grant
    Filed: May 26, 1998
    Date of Patent: January 23, 2001
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shumin Wang, Brian L. Mueller
  • Chemical mechanical polishing slurry useful for copper substrates
    Patent number: 6126853
    Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
    Type: Grant
    Filed: July 11, 1997
    Date of Patent: October 3, 2000
    Assignee: Cabot Microelectronics Corporation
    Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
  • Chemical mechanical polishing slurry useful for copper/tantalum substrate
    Patent number: 6063306
    Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: May 16, 2000
    Assignee: Cabot Corporation
    Inventors: Vlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
  • Multi-oxidizer precursor for chemical mechanical polishing
    Patent number: 6039891
    Abstract: A chemical mechanical polishing slurry precursor comprising urea, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry precursor to prepare a chemical mechanical polishing slurry with a first oxidizer and thereafter using the slurry to remove titanium, titanium nitride, and an aluminum alloy containing layers from a substrate.
    Type: Grant
    Filed: July 11, 1997
    Date of Patent: March 21, 2000
    Assignee: Cabot Corporation
    Inventors: Vlasta Brusic Kaufman, Shumin Wang
  • Multi-oxidizer slurry for chemical mechanical polishing
    Patent number: 6033596
    Abstract: A chemical mechanical polishing slurry comprising a first oxidizer of urea hydrogen peroxide, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry to remove titanium, titanium nitride, and an aluminum alloy containing layer from a substrate.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: March 7, 2000
    Assignee: Cabot Corporation
    Inventors: Vlasta Brusic Kaufman, Shumin Wang
  • Multi-oxidizer slurry for chemical mechanical polishing
    Patent number: 5783489
    Abstract: A chemical mechanical polishing slurry comprising at least two oxidizing agents, an organic acid and an abrasive and a method for using the chemical mechanical polishing slurry to remove titanium, titanium nitride, and an aluminum alloy containing layer from a substrate.
    Type: Grant
    Filed: September 24, 1996
    Date of Patent: July 21, 1998
    Assignee: Cabot Corporation
    Inventors: Vlasta Brusic Kaufman, Shumin Wang