Abstract: A resist underlayer film-forming composition contains: (A) a compound having a partial structure represented by Formula (1). In Formula (1), R1 and R2 each denote a hydrogen atom, an alkyl group having 1-10 carbon atoms or an aryl group having 6-40 carbon atoms, X denotes an alkyl group having 1-10 carbon atoms, a hydroxyl group, an alkoxy group having 1-10 carbon atoms, an alkoxycarbonyl group having 1-10 carbon atoms, a halogen atom, a cyano group, a nitro group or a combination of these, Y denotes a direct bond, an ether bond, a thioether bond or an ester bond, n is an integer between 0 and 4, and * denotes a site of bonding to a residue of compound (A)); and a solvent.

Abstract: A resist underlayer film forming composition which has high storage stability, has a low film curing start temperature, can cause the generation of a sublimated product in a reduced amount, and enables the formation of a film that is rarely eluted into a photoresist solvent; a method for forming a resist pattern using the resist underlayer film forming composition; and a method for manufacturing a semiconductor device. The resist underlayer film forming composition includes a crosslinkable resin, a crosslinking agent, a crosslinking catalyst represented by formula (I) and a solvent. (A-SO3)?(BH)+[wherein A represents a linear, branched or cyclic saturated or unsaturated aliphatic hydrocarbon group which may be substituted, an aryl group which may be substituted by a group other than a hydroxy group, or a heteroaryl group which may be substituted; and B represents a base having a pKa value of 6.5 to 9.5.

Abstract: Provided is a method for producing a polymer, comprising: a first step for synthesizing a crude polymer by reacting a monomer containing a pyrimidinetrione structure, an imidazolidinedione structure, or a triazinetrione structure, in an organic solvent in the presence of a quaternary phosphonium salt or quaternary ammonium salt; and a second step for precipitating and separating a purified polymer by mixing a poor solvent with the crude polymer-containing solution obtained in the first step.

Abstract: Provided is a composition which is for forming a resist underlayer film and with which the amount of a sublimate derived from a low-molecular-weight component such as an oligomer can be reduced, the composition comprising, for example, an organic solvent and a polymer having a repeating unit represented by formula (1-1), wherein the content of a low-molecular-weight component having a weight average molecular weight of 1,000 or less is 10 mass % or less in the polymer.

Abstract: A film-forming composition suitable as a resist underlayer film-forming composition from which a resist underlayer film having not only a good EUV resist adhesivity but also a good etching processability due to a high fluorine-based etching rate. For example, a film-forming composition includes a polymer represented by Formula (E1) and a solvent.

Abstract: A metal adsorption agent including a chelating agent (A) and a chelating agent (B), wherein the chelating agent (A) is a metal adsorption agent containing a carrier having a glucamine-type functional group, and the chelating agent (B) is a metal adsorption agent containing a carrier having a thiol group, a thiourea group, an amino group, a triazabicyclodecene-inducing group, a thiouronium group, an imidazole group, a sulfonate group, a hydroxy group, an aminoacetate group, an amidoxime group, an aminophosphate group, or any combination of these groups. The carrier of each of the chelating agent (A) and the chelating agent (B) may be silica, a silica component-containing substance, polystyrene, or crosslinked porous polystyrene. The solution may contain water or an organic solvent.

Abstract: There is provided a novel isocyanuric acid derivative having two alkoxyalkyl groups and having a trialkoxysilyl group introduced therein, and a method for producing the isocyanuric acid derivative. An isocyanuric acid derivative of formula (1): wherein R1 is a methyl group or an ethyl group; two R2s are each a C1-2 alkylene group; and two R3s are each a methyl group, an ethyl group, or a C2-4 alkoxyalkyl group, which may be liquid at ambient temperature and ambient pressure.

Abstract: A novel isocyanuric acid derivative having two alkoxyalkyl groups and having a trialkoxysilyl group introduced therein, and a method for producing the isocyanuric acid derivative. An isocyanuric acid derivative of formula (1): wherein R1 is a methyl group or an ethyl group; two R2s are each a C1-2 alkylene group; and two R3s are each a methyl group, an ethyl group, or a C2-4 alkoxyalkyl group, which may be liquid at ambient temperature and ambient pressure.