Patents by Inventor Shungui YANG

Shungui YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11621371
    Abstract: An epitaxial structure, a preparation method thereof, and a light-emitting diode (LED) are provided. The epitaxial structure includes a sapphire substrate, a GaN layer, a defect exposure layer, and a defect termination layer stacked in sequence.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: April 4, 2023
    Assignee: CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
    Inventor: Shungui Yang
  • Publication number: 20210305455
    Abstract: An epitaxial structure, a preparation method thereof, and a light-emitting diode (LED) are provided. The epitaxial structure includes a sapphire substrate, a GaN layer, a defect exposure layer, and a defect termination layer stacked in sequence.
    Type: Application
    Filed: September 30, 2019
    Publication date: September 30, 2021
    Inventor: Shungui YANG