Patents by Inventor Shunichi Endo
Shunichi Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240118032Abstract: To directly and clearly observe the state inside a melting chamber in an electric furnace, a video-device-equipped electric furnace comprises: a melting chamber; a preheating chamber; and a video device to observe an inside of the melting chamber. The video device includes: a relay lens; an inner tube containing the relay lens and having an outer diameter of 100 mm or less; an outer tube containing the inner tube; and an imaging device located at an axial end of the relay lens on a furnace outside. The video device is provided through a hole in a furnace wall or lid so that the relay lens is located 300 mm to 3500 mm away from a highest molten iron interface in a vertically upward direction and the imaging device is located 300 mm or more away from an inner wall of the furnace wall or lid in a furnace outward direction.Type: ApplicationFiled: January 27, 2022Publication date: April 11, 2024Applicant: JFE STEEL CORPORATIONInventors: Koichi TSUTSUMI, Yoshihiro MIWA, Goro OKUYAMA, Katsutoshi ENDO, Shunichi KAWANAMI
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Publication number: 20240085110Abstract: To ensure stable supply of a cold iron source to a melting chamber, a method of producing molten iron uses an electric furnace that includes: a preheating chamber; a melting chamber; an extruder located in the preheating chamber; and a video device configured to observe an inside of the melting chamber, and comprises: an extrusion process of supplying a cold iron source preheated in the preheating chamber to the melting chamber by the extruder; and a melting process of melting the cold iron source supplied to the melting chamber by arc heat to obtain molten iron, wherein in the extrusion process, a moving amount of the extruder and/or a time interval for moving the extruder is controlled based on visual information obtained from the video device.Type: ApplicationFiled: January 27, 2022Publication date: March 14, 2024Applicant: JFE STEEL CORPORATIONInventors: Koichi TSUTSUMI, Yoshihiro MIWA, Shohei NAGASHIMA, Goro OKUYAMA, Katsutoshi ENDO, Shunichi KAWANAMI
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Publication number: 20040200177Abstract: Provided is a form for use in placing concrete, which is made from a recycled resin composition including a recycled polyester resin, a lactone polymer, an epoxidized diene based block copolymer, and optionally a polyolefin resin. The form can be made extremely advantageously from the view point of production cost since it utilizes a recycled resin such as waste PET. Further, the form is easy to set up and to remove after the placement of concrete when a support is used for setting. The form for use in placing concrete according to the present invention is improved in formability and has excellent mechanical strength.Type: ApplicationFiled: May 28, 2004Publication date: October 14, 2004Inventors: Kouichi Okumura, Kazuya Kotani, Yoshinobu Mizutani, Genichiro Ochiai, Shunichi Endo
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Patent number: 6727182Abstract: It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl3 gas. Thereafter, when the surface of the wafer is irradiated with O2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO2 or the like may be substituted for the film.Type: GrantFiled: October 15, 1998Date of Patent: April 27, 2004Assignee: Tokyo Electron LimitedInventors: Takashi Akahori, Shuichi Ishizuka, Shunichi Endo, Takeshi Aoki, Tadashi Hirata
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Patent number: 6468603Abstract: This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container 2 including a stage 4 for an object to be processed 10; and applying a bias electric power to the stage 4 in order to draw ions in the plasma toward the object 10 while forming an insulation film consisting of a film of fluorine-added carbon onto the object 10 by the plasma. At first, a first electric power of the bias electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a first flow rate to form the film of fluorine-added carbon onto the object 10. Then, a second electric power of the bias electric power smaller than the first electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a second flow rate smaller than the first flow rate to form the film of fluorine-added carbon onto the object 10.Type: GrantFiled: September 18, 2000Date of Patent: October 22, 2002Assignee: Tokyo Electron LimitedInventors: Shunichi Endo, Tadashi Hirata
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Patent number: 6429518Abstract: In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO2, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH4 gas and C2H4 gas, are excited into plasma to stack a SiC film [200] as the contact layer on the top surface of a SiO2 film [110]. After that, switching of deposition gases is conducted for about 1 second by introducing SiH4 gas, C2H4 gas, C4F8 gas and C2H4 gas. Subsequently, CF film deposition gases, such as C4F8 gas and C2H4 gas, for example, are excited into plasma to deposit[e] a CF film [120] on the SiC film [200].Type: GrantFiled: September 12, 2000Date of Patent: August 6, 2002Assignee: Tokyo Electron Ltd.Inventor: Shunichi Endo
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Patent number: 6355902Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.Type: GrantFiled: January 2, 2001Date of Patent: March 12, 2002Assignee: Tokyo Electron LimitedInventors: Takashi Akahori, Masaki Tozawa, Yoko Naito, Risa Nakase, Osamu Yokoyama, Shuichi Ishizuka, Shunichi Endo, Masahide Saito, Takeshi Aoki, Tadashi Hirata
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Patent number: 6344508Abstract: In the present invention, the No. I invention relates to a regenerated PET resin composition which comprises formulating 0.5-100 part by weight of a lactone polymer (B) with 100 parts by weight of a regenerated PET resin (A), in which there is improved a molding processability such as an injection moldability and extruding molding, and relates to a molded article therefrom and, the No. II invention relates to a flame retardant resin composition containing a thermoplastic resin (E) and a flame retardant (F), in which bleeding of the flame retardant is suppressed without a decline of a flame retardancy, and relates to a molded article therefrom.Type: GrantFiled: September 14, 2000Date of Patent: February 5, 2002Assignee: Daicel Chemical Industries, Ltd.Inventors: Shunichi Endo, Genichiro Ochiai, Yoshinobu Mizutani, Takuya Miho, Koichi Okumura
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Publication number: 20010020608Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.Type: ApplicationFiled: January 2, 2001Publication date: September 13, 2001Inventors: Takashi Akahori, Masaki Tozawa, Yoko Naito, Risa Nakase, Osamu Yokoyama, Shuichi Ishizuka, Shunichi Endo, Masahide Saito, Takeshi Aoki, Tadashi Hirata
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Publication number: 20010001741Abstract: It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice.Type: ApplicationFiled: October 15, 1998Publication date: May 24, 2001Inventors: TAKASHI AKAHORI, SHUICHI ISHIZUKA, SHUNICHI ENDO, TAKESHI AOKI, TADASHI HIRATA
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Patent number: 6218299Abstract: For example, in a plasma processing system, C4F8 gas and C2H4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350° C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.Type: GrantFiled: July 6, 1998Date of Patent: April 17, 2001Assignee: Tokyo Electron LimitedInventors: Takashi Akahori, Yoko Naito, Shunichi Endo, Masahide Saito, Takeshi Aoki, Tadashi Hirata
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Patent number: 6215087Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.Type: GrantFiled: July 10, 1998Date of Patent: April 10, 2001Assignee: Tokyo Electron LimitedInventors: Takashi Akahori, Masaki Tozawa, Yoko Naito, Risa Nakase, Osamu Yokoyama, Shuichi Ishizuka, Shunichi Endo, Masahide Saito, Takeshi Aoki, Tadashi Hirata
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Patent number: 6017987Abstract: A novel fire-retardant polymer composition is provided which comprises 100 parts by weight of a polymer such as polyolefins and polystyrenes, 1-30 parts by weight of an oxide or a complex oxide of metals such as antimony, boron, and molybdenum, and 1-30 parts by weight of heat-expandable graphite. The fire-retardant polymer composition emits less amounts of smoke and corrosive gas on burning with the characteristics of the polymer material kept unimpaired.Type: GrantFiled: February 2, 1998Date of Patent: January 25, 2000Assignee: Tosoh CorporationInventors: Fumio Okisaki, Akinori Hamada, Shunichi Endo, Genichiro Ochiai
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Patent number: 5942561Abstract: A fire-retardant polymer composition is provided which comprises 100 parts by weight of a polymer such as polystyrene, 1 to 30 parts by weight of heat-expandable graphite, and 1 to 30 parts by weight of a phosphorus compound. The polymer composition is fire-retardant, and emits less smoke and less corrosive gas on burning.Type: GrantFiled: February 29, 1996Date of Patent: August 24, 1999Assignee: Tosoh CorporationInventors: Fumio Okisaki, Akinori Hamada, Shunichi Endo, Genichiro Ochiai
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Patent number: 5797820Abstract: The present invention provides a slat band chain for both straight and curved lines and a sprocket made of synthetic resin which the chain can engage with every other tooth of the sprocket. At least three reinforcement ribs 24a-24c connecting the front curled portions 14 with the rear curled portions 16 are installed. The width B, and the length C, of the rear curled portions in the feeding direction are set to the intermediate value of those conventional slat band chains for straight and curved lines.Type: GrantFiled: October 29, 1997Date of Patent: August 25, 1998Assignee: Yamakyu Chain Co., Ltd.Inventor: Shunichi Endo
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Patent number: 5760115Abstract: A novel fire-retardant polymer composition is provided which comprises 100 parts by weight of a polymer such as polyolefins and polystyrenes, 1-30 parts by weight of an oxide or a complex oxide of metals such as antimony, boron, and molybdenum, and 1-30 parts by weight of heat-expandable graphite. The fire-retardant polymer composition emits less amounts of smoke and corrosive gas on burning with the characteristics of the polymer material kept unimpaired.Type: GrantFiled: February 29, 1996Date of Patent: June 2, 1998Assignee: Tosoh CorporationInventors: Fumio Okisaki, Akinori Hamada, Shunichi Endo, Genichiro Ochiai