Patents by Inventor Shunichi Minakata

Shunichi Minakata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for the production of dielectric thin films
    Patent number: 5532504
    Abstract: There is provided a process for producing a dielectric thin film of a compound oxide of a high-melting metal and a low-melting metal by vapor-depositing the compound oxide onto a substrate, wherein the improvement comprises irradiating a laser beam onto the substrate or to the vapor phase during vapor deposition.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.
    Type: Grant
    Filed: December 5, 1994
    Date of Patent: July 2, 1996
    Assignee: Kawasaki Jukogyo Kabushiki Kaisha
    Inventors: Hitoshi Tabata, Osamu Murata, Junzo Fujioka, Shunichi Minakata
  • Process for producing a perovskite film by irradiating a target of the perovskite with a laser beam and simultaneously irradiating the substrate upon which the perovskite is deposited with a laser beam
    Patent number: 5395663
    Abstract: There is provided a process for producing a dielectric thin film of a perovskite oxide on a substrate by a vapor-deposition process which includes vaporizing the oxide and irradiating the oxide vapor or the substrate with a laser beam.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.
    Type: Grant
    Filed: April 26, 1993
    Date of Patent: March 7, 1995
    Assignee: Kawasaki Jukogyo Kabushiki Kaisha
    Inventors: Hitoshi Tabata, Osamu Murata, Junzo Fujioka, Shunichi Minakata, Shichio Kawai, Tomoji Kawai
  • Pyroelectric IR sensor using an oxide superconductor upper electrode
    Patent number: 5354732
    Abstract: An electrode in an electronic device using a functional thin film facilitates epitaxial growth during the functional material film-forming process and prevents the generation of cracks due to thermal stress. An oxide superconductor is using as an electrode material, thereby forming the crystal structure identical with the crystal structure of a functional thin film, and rendering their lattice constant and coefficient of thermal expansion close to the lattice constant and coefficient of thermal expansion functional thin film. According to the electrode material, high electric conductivity, low thermal conductivity and large thermal absorption coefficient characteristics can also be obtained.
    Type: Grant
    Filed: December 28, 1992
    Date of Patent: October 11, 1994
    Assignee: Kawasaki Jukogyo Kabushiki Kaisha
    Inventors: Hitoshi Tabata, Osamu Murata, Junzo Fujioka, Shunichi Minakata, Tomoji Kawai, Shichio Kawai