Abstract: A polyimide precursor having repeating units of the formula: 1

Abstract: A polyimide precursor having repeating units of the formula: wherein R1 is a tetravalent organic group having 4 or more carbon atoms; R2 is a trivalent or tetravalent organic group having one or more aromatic rings; R3 is a monovalent organic group; A is a monovalent group showing acidity; and n is an integer of 1 or 2, is effective for preparing a highly sensitive negative-working photosensitive material developable with an alkaline aqueous solution in a short time with high resolution.

Abstract: A polyimide precursor having repeating units of the formula: ##STR1## wherein R.sup.1 is a tetravalent organic group having 4 or more carbon atoms; R.sup.2 is a trivalent or tetravalent organic group having one or more aromatic rings; R.sup.3 is a monovalent organic group; A is a monovalent group showing acidity; and n is an integer of 1 or 2, is effective for preparing a highly sensitive negative-working photosensitive material developable with an alkaline aqueous solution in a short time with high resolution.

Abstract: A low dielectric resin composition comprising the following components (a) and (b), and the dielectric constant of a coating film formed by this composition being at most 3:(a) a resin having functional groups in its molecule and being soluble in a solvent; and(b) a partially hydrolyzed condensate of alkoxysilanes of the formula R.sup.1.sub.m R.sup.2.sub.n Si(OR.sup.3).sub.4-m-n, wherein each of R.sup.1 and R.sup.2 which may be the same or different, is a non-hydrolyzable group, R.sup.3 is an alkyl group, and m and n are integers of from 0 to 3 satisfying 0.ltoreq.m+n.ltoreq.3.

Abstract: Insulating resin composition for a semiconductor device having a multilevel interconnection layers formed by the resin and having a superior planarizing capability relative to a lower interconnection layer is provided, which resin being a cured product of a polyamic acid ester oligomer obtained by reacting an aromatic diamine and/or a diaminosiloxane with an aromatic tetracarboxylic acid ester obtained by reacting an aromatic tetracarboxylic acid dianhydride with an alcohol or alcohol derivative.

Abstract: A composition of materials comprising a polyamide acid-silicone intermediate obtained by reacting (a) a diaminoamide compound of the formula: ##STR1## wherein Ar and Y are as defined in the specification, (b) a diaminosiloxane, (c) a diamine, and (d) an aromatic tetracarboxylic acid dianhydride can form a protective film used in a semiconductor device excellent in adhesive properties, heat resistance and preventing soft errors due to .alpha.-rays.

Abstract: A polyimide-isoindroquinazolinedione-silicone copolymer resin produced by reacting (a) a diaminoamide, (b) a diaminosiloxane, (c) a diamine, and (d) a tetracarboxylic acid dianhydride to give a polyamide acid-silicone intermediate, which is then subjected to dehydration and ring closure, is excellent particularly in adhesiveness, moisture resistance, wear resistance and heat resistance. The polyamide acid-silicone intermediate is stable in the form of a varnish and usuable commercially as a raw material for the polyimide-isoindroquinazolinedione-silicone copolymer resin.