Abstract: Phosphor 8 is attached to window portion 6 of housing vessel 7 in light-emitting diode 20. Blue excitation light 9 emitted from blue light-emitting diode chip 4 is irradiated on phosphor 8, and part of excitation light 9 is absorbed by phosphor 8, which converts its wavelength and produces yellow fluorescence 9a to be emitted outward from light-emitting diode 20. In addition, part of excitation light 9 also passes through phosphor 8 and becomes transmitted excitation light 9b, which is then emitted outward from light-emitting diode 20. Yellow fluorescence 9a and blue transmitted excitation light 9b blend to become white light 10.

Abstract: A GaN crystal substrate has a crystal growth surface on which a crystal is grown, and a rear surface opposite to the crystal growth surface. The crystal growth surface has a roughness Ra(C)of at most 10 nm, and the rear surface has a roughness Ra(R) of at least 0.5 ?and at most 10 ?m. A ratio Ra(R)/Ra(C) of the surface roughness Ra(R) to the surface roughness Ra(C) is at least 50. Thus, a GaN crystal substrate of which front and rear surfaces are distinguishable from each other is provided, without impairing the morphology of a semiconductor layer grown on the GaN crystal substrate.

Abstract: A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

Abstract: In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.

Abstract: In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.

Abstract: In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.

Abstract: An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays.

Abstract: An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays.

Abstract: A waveguide type optical detection apparatus which is provided on an optical integrated circuit that has a waveguide for transmitting a light from point to point through the waveguide, one or more sets of two adjacent photodetectors provided on the waveguide, and one or more light-insensitive areas existing between the two adjacent photodetectors of each set. The waveguide type optical detection apparatus includes a waveguide focusing part and one or more reflection parts, the waveguide focusing part being provided on the waveguide for allowing a light beam passing through the waveguide to be focused on each of the two adjacent photodetectors of each set, and the reflection parts provided adjacent to each of the light-insensitive areas for reflecting each of light beams sent from the waveguide focusing means forward each of the two adjacent photodetectors of each set so that the light beams are received by the photodetectors.

Abstract: An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays.

Abstract: A two-dimensional pattern of a silicon oxide film is formed on a silicon surface of a substrate, thereby to form a material, the two-dimensional pattern being represented by the presence and absence and/or thickness variations of the silicon oxide film. The material is nitrided to form a modified layer on the surface of the material, the modified layer being thicker on the silicon oxide film and thinner on the silicon surface of the substrate or thicker on the thicker portion of the silicon oxide film and thinner on the thinner portion of the silicon oxide film. The thinner portion of the modified layer is removed while leaving the thicker portion of the modified layer, for thereby forming the modified layer on the silicon oxide film substantially in the same shape as the silicon oxide film.