Abstract: The present invention provides a vehicle control device capable of avoiding a problem due to insufficient energy remaining in a vehicle in a parking lot. The vehicle control device 100 includes a remaining energy amount calculation unit 110, a parking lot information acquisition unit 120, a prediction unit 130, a required energy amount calculation unit 140, and a parking determination unit 150. The remaining energy amount calculation unit 110 calculates a remaining amount of energy of a vehicle V. The parking lot information acquisition unit 120 acquires map information and other vehicles information of a parking lot. The prediction unit 130 predicts a traveling speed and a movement time of the vehicle V at the time of entry and exit. The required energy amount calculation unit 140 calculates a required amount of energy. The parking determination unit 150 determines whether or not the vehicle V can be parked based on the remaining amount of energy and the required amount of energy.

Abstract: Realized is a vehicle control device capable of performing automatic driving control that does not reduce turning accuracy of a host vehicle even when an object in a blind spot is different from an assumption and a vehicle speed decreases due to a rapid deceleration. A vehicle control device 10 includes a blind spot object estimation unit 24 that detects a blind spot region 320 of an external-field recognition sensor 12 that recognizes an external field and estimates a blind spot object 310 potential in the blind spot region 320, and a future trajectory generation unit 26 that generates a future trajectory of a host vehicle in consideration of a potential risk from the blind spot object 310 estimated by the blind spot object estimation unit 24 and surrounding information of a vehicle 1 that is the host vehicle.

Abstract: The invention provides a technique capable of flexibly changing a parking position and a traveling route when guiding a vehicle to a parking position. A vehicle control device according to the invention transmits vehicle data representing a physical state of the vehicle, and receives virtual parking frame data and traveling route data corresponding to the vehicle data, which are repeated until parking is completed.

Abstract: The present invention provides a vehicle control device capable of avoiding a problem due to insufficient energy remaining in a vehicle in a parking lot. The vehicle control device 100 includes a remaining energy amount calculation unit 110, a parking lot information acquisition unit 120, a prediction unit 130, a required energy amount calculation unit 140, and a parking determination unit 150. The remaining energy amount calculation unit 110 calculates a remaining amount of energy of a vehicle V. The parking lot information acquisition unit 120 acquires map information and other vehicles information of a parking lot. The prediction unit 130 predicts a traveling speed and a movement time of the vehicle V at the time of entry and exit. The required energy amount calculation unit 140 calculates a required amount of energy. The parking determination unit 150 determines whether or not the vehicle V can be parked based on the remaining amount of energy and the required amount of energy.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first electrode, and a first insulating film. The first electrode extends in a first direction and is provided inside the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode, a thickness of the first insulating film in a direction from the first electrode toward the semiconductor layer increasing in stages along the first direction. The first insulating film has three or more mutually-different thicknesses.

Abstract: A semiconductor device includes a first conductivity type first semiconductor region, a second semiconductor region on the first semiconductor region, a third semiconductor region on the second semiconductor region, a first insulating portion extending inwardly of, and surrounded by, the first semiconductor region, a gate electrode extending inwardly of the first insulating portion and spaced from the second semiconductor region in a second direction that intersects a first direction extending from the first semiconductor region to the second semiconductor region, by the first insulating portion, and a first electrode including a portion spaced from the first semiconductor region in the second direction by the first insulating portion, and surrounded by the first insulating portion and the gate electrode.

Abstract: Provided is a feature such that the opportunity to cancel travel control can be reduced by seamlessly switching between travel modes in combination with a plurality of functions. A travel control device has: a first mode which causes a vehicle to travel according to the control target set on the basis of an object outside the vehicle; and a second mode which causes the vehicle to travel according to the control target set irrespective of an object outside the vehicle. If it is impossible to set the control target on the basis of the object outside the vehicle during traveling in the first mode, the travel mode is shifted to the second mode. If it is possible to set the control target on the basis of the object outside the vehicle during traveling in the second mode, the travel mode is shifted to the first mode.

Abstract: A semiconductor device includes a first conductivity type first semiconductor region, a second semiconductor region on the first semiconductor region, a third semiconductor region on the second semiconductor region, a first insulating portion extending inwardly of, and surrounded by, the first semiconductor region, a gate electrode extending inwardly of the first insulating portion and spaced from the second semiconductor region in a second direction that intersects a first direction extending from the first semiconductor region to the second semiconductor region, by the first insulating portion, and a first electrode including a portion spaced from the first semiconductor region in the second direction by the first insulating portion, and surrounded by the first insulating portion and the gate electrode.

Abstract: A semiconductor device includes a first conductivity type first semiconductor region, a second semiconductor region on the first semiconductor region, a third semiconductor region on the second semiconductor region, a first insulating portion extending inwardly of, and surrounded by, the first semiconductor region, a gate electrode extending inwardly of the first insulating portion and spaced from the second semiconductor region in a second direction that intersects a first direction extending from the first semiconductor region to the second semiconductor region, by the first insulating portion, and a first electrode including a portion spaced from the first semiconductor region in the second direction by the first insulating portion, and surrounded by the first insulating portion and the gate electrode.

Abstract: Provided is a feature such that the opportunity to cancel travel control can be reduced by seamlessly switching between travel modes in combination with a plurality of functions. This travel control device 201 has: a first mode which causes a vehicle to travel according to the control target set on the basis of an object outside the vehicle; and a second mode which causes the vehicle to travel according to the control target set irrespective of an object outside the vehicle. If it is impossible to set the control target on the basis of the object outside the vehicle during traveling in the first mode, the travel mode is shifted to the second mode. If it is impossible to set the control target on the basis of the object outside the vehicle during traveling in the second mode, the travel mode is shifted to the first mode.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first electrode, and a first insulating film. The first electrode extends in a first direction and is provided inside the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode, a thickness of the first insulating film in a direction from the first electrode toward the semiconductor layer increasing in stages along the first direction. The first insulating film has three or more mutually-different thicknesses.

Abstract: In some embodiments, a semiconductor device includes a semiconductor chip including a first terminal, a second terminal and a third terminal, a frame electrically coupled to the second terminal, the frame mounting the semiconductor chip, a first conductor including a chip connection electrically coupled to the first terminal, a first connection connecting to the chip connection and protruding from the chip connection, and a second connection connecting to the chip connection, protruding from the chip connection, and being provided physically spaced from the first connection. The semiconductor device further includes a second conductor electrically coupled to the third terminal.

Abstract: A semiconductor device includes a first conductivity type first semiconductor region, a second semiconductor region on the first semiconductor region, a third semiconductor region on the second semiconductor region, a first insulating portion extending inwardly of, and surrounded by, the first semiconductor region, a gate electrode extending inwardly of the first insulating portion and spaced from the second semiconductor region in a second direction that intersects a first direction extending from the first semiconductor region to the second semiconductor region, by the first insulating portion, and a first electrode including a portion spaced from the first semiconductor region in the second direction by the first insulating portion, and surrounded by the first insulating portion and the gate electrode.

Abstract: A semiconductor apparatus includes a drain region of a first-conductivity type, a drain electrode electrically coupled to the drain region, and a semiconductor layer of the first-conductivity type formed onto the drain region and having a first impurity concentration. The semiconductor apparatus further includes: a source region of the first-conductivity type formed on the semiconductor layer and having a second impurity concentration; a first source electrode electrically coupled to the source region; and a gate electrode formed via an insulating layer. The one end of the gate electrode is in a depth of the source region, and the other end is in a depth of the semiconductor layer or the drain region. A second source electrode is provided in the semiconductor layer under the gate electrodes via an insulating layer. A second spacing between the second source electrodes is larger than a first spacing between the gate electrodes.

Abstract: According to one embodiment, a semiconductor device, includes a first semiconductor layer of a first conductivity, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the first conductivity. A first plurality of source elements are spaced from each other and a first gate electrode extends continuously between the source elements. A source electrode is electrically connected to the source elements, and a drain electrode is on the first semiconductor layer such that the first semiconductor layer is between the second semiconductor layer and the drain electrode. By employing this structure, an inactive region decreases, and an active area ratio increases. Thereby, a breakdown voltage can be maintained while an on-resistance can be reduced.

Abstract: According to an embodiment, a semiconductor device includes a first region, a second region, a first electrode, a first semiconductor layer provided on the first electrode, a second semiconductor layer provided on the first semiconductor layer, a third semiconductor layer provided on the second semiconductor layer in the second region, second electrodes, third electrodes, a third insulator film, a fourth electrode, a fourth insulator film, and a fifth electrode. The third electrodes face the second semiconductor layer and the first semiconductor layer in the first region through a second insulator film. The third electrodes face the third semiconductor layer, the second semiconductor layer and the first semiconductor layer in the second region through the second insulator film. Some of the third electrodes extend from the first region to the second region, and the others of the third electrodes are provided separately from each other in the second region.

Abstract: According to one embodiment, a semiconductor memory device includes a first semiconductor layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer is a first conductivity type. The second semiconductor layer is provided in a surface region of the first semiconductor layer and is the first conductivity type. The first electrode is provided inside a first trench extending in the first direction and opened to a surface of the second semiconductor layer. The second electrode is provided in a second trench extending in a second direction crossing the first direction and opened to the surface of the second semiconductor layer. A dimension from the surface of the second semiconductor layer to a lower end of the second electrode is shorter than a dimension from the surface of the second semiconductor layer to a lower end of the first electrode.

Abstract: According to one embodiment, a semiconductor memory device includes a first semiconductor layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer is a first conductivity type. The second semiconductor layer is provided in a surface region of the first semiconductor layer and is the first conductivity type. The first electrode is provided inside a first trench extending in the first direction and opened to a surface of the second semiconductor layer. The second electrode is provided in a second trench extending in a second direction crossing the first direction and opened to the surface of the second semiconductor layer. A dimension from the surface of the second semiconductor layer to a lower end of the second electrode is shorter than a dimension from the surface of the second semiconductor layer to a lower end of the first electrode.

Abstract: A semiconductor apparatus includes a drain region of a first-conductivity type, a drain electrode electrically coupled to the drain region, and a semiconductor layer of the first-conductivity type formed onto the drain region and having a first impurity concentration. The semiconductor apparatus further includes: a source region of the first-conductivity type formed on the semiconductor layer and having a second impurity concentration; a first source electrode electrically coupled to the source region; and a gate electrode formed via an insulating layer. The one end of the gate electrode is in a depth of the source region, and the other end is in a depth of the semiconductor layer or the drain region. A second source electrode is provided in the semiconductor layer under the gate electrodes via an insulating layer. A second spacing between the second source electrodes is larger than a first spacing between the gate electrodes.

Abstract: A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer; a plurality of first trenches passing through the second semiconductor layer and reaching the first semiconductor layer; a gate insulating film provided on an inner wall of the first trench; and a gate electrode filling in the first trench via the gate insulating film. A PN junction interface is provided between the first semiconductor layer and the second semiconductor layer. A distance from an upper face of the second semiconductor layer to the PN junction interface is minimized nearly at a center between the first trenches.