Patents by Inventor Shuntaro Takahashi
Shuntaro Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210098346Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.Type: ApplicationFiled: April 11, 2019Publication date: April 1, 2021Inventors: Kazuki OKUYAMA, Shuntaro TAKAHASHI, Motoharu HAGA, Shingo YOSHIDA, Kazuhisa KUMAGAI, Hajime OKUDA
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Publication number: 20200403393Abstract: In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (?Iref) and a second set value (?Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (?Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.Type: ApplicationFiled: August 31, 2020Publication date: December 24, 2020Applicant: Rohm Co., Ltd.Inventors: Toru Takuma, Naoki Takahashi, Shuntaro Takahashi
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Patent number: 10826486Abstract: This switch drive circuit drives a switch element. The switch drive circuit is provided with a signal input terminal, a disconnect circuit and a connect circuit. A control signal is input into the signal input terminal. The disconnect circuit includes a first switch which switches connection/disconnection of a line connecting the signal input terminal to a control terminal of the switch element, and when the switch element is to be turned off, the disconnect circuit performs a disconnection operation to disconnect the line using the first switch. The connect circuit includes a second switch which switches connection/disconnection between a certain point on the line, positioned on the control terminal side of the first switch, and a reference potential point, and when the switch element is to be turned off, the connect circuit performs a connection operation to connect the certain point to the reference potential point using the second switch.Type: GrantFiled: September 26, 2016Date of Patent: November 3, 2020Assignee: Rohm Co., Ltd.Inventor: Shuntaro Takahashi
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Patent number: 10790657Abstract: In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (? Iref) and a second set value (? Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (? Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.Type: GrantFiled: March 3, 2017Date of Patent: September 29, 2020Assignee: Rohm Co., Ltd.Inventors: Toru Takuma, Naoki Takahashi, Shuntaro Takahashi
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Publication number: 20200251894Abstract: An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.Type: ApplicationFiled: April 23, 2020Publication date: August 6, 2020Applicant: ROHM CO., LTD.Inventors: Toru Takuma, Shuntaro Takahashi, Naoki Takahashi
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Publication number: 20200212664Abstract: A switching device has, for example, a first terminal configured to be connected to an application node for a first voltage, a second terminal configured to be connected to the first end of a load, a third terminal configured to be connected to the second end of the load and to an application node for a second voltage, a switching element configured to be connected between the first and second terminals, a first active clamper configured to limit the output voltage at the second terminal with reference to the first voltage in a first state, and a second active clamper configured to limit the output voltage with reference to the second voltage in a second state different from the first state.Type: ApplicationFiled: December 24, 2019Publication date: July 2, 2020Inventors: Toru TAKUMA, Shuntaro TAKAHASHI
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Patent number: 10692774Abstract: This semiconductor device comprises: an n-type semiconductor substrate which is connected to an output terminal; a first p-type well which is formed in the n-type semiconductor substrate; a first n-type semiconductor region which is formed in the first p-type well and is connected to a control terminal; and a potential separation part which is connected between the first p-type well and a ground terminal. The potential separation part sets the first p-type well and the ground terminal to a same potential when the output terminal is held at a higher potential than the ground terminal, and sets the first p-type well and the output terminal to a same potential when the output terminal is held at a lower potential than the ground terminal.Type: GrantFiled: October 31, 2016Date of Patent: June 23, 2020Assignee: Rohm Co., Ltd.Inventors: Hirofumi Yuki, Shuntaro Takahashi, Hiroshi Furutani
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Patent number: 10658831Abstract: An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.Type: GrantFiled: August 9, 2017Date of Patent: May 19, 2020Assignee: Rohm Co., Ltd.Inventors: Toru Takuma, Shuntaro Takahashi, Naoki Takahashi
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Patent number: 10366977Abstract: An overheat protection circuit has an NPN transistor, a power terminal to which a supply voltage is applied, a transmission path by which the supply voltage is transmitted from the power terminal to the collector of the NPN transistor without passing through a current source, and an output voltage generator that generates an output voltage commensurate with the base-emitter voltage of the NPN transistor.Type: GrantFiled: May 5, 2016Date of Patent: July 30, 2019Assignee: Rohm Co., Ltd.Inventors: Hirofumi Yuki, Shuntaro Takahashi
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Publication number: 20190123541Abstract: In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (? Iref) and a second set value (? Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (? Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.Type: ApplicationFiled: March 3, 2017Publication date: April 25, 2019Applicant: ROHM CO., LTD.Inventors: Toru Takuma, Naoki Takahashi, Shuntaro Takahashi
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Publication number: 20190006246Abstract: This semiconductor device comprises: an n-type semiconductor substrate which is connected to an output terminal; a first p-type well which is formed in the n-type semiconductor substrate; a first n-type semiconductor region which is formed in the first p-type well and is connected to a control terminal; and a potential separation part which is connected between the first p-type well and a ground terminal. The potential separation part sets the first p-type well and the ground terminal to a same potential when the output terminal is held at a higher potential than the ground terminal, and sets the first p-type well and the output terminal to a same potential when the output terminal is held at a lower potential than the ground terminal.Type: ApplicationFiled: October 31, 2016Publication date: January 3, 2019Applicant: Rohm Co., Ltd.Inventors: Hirofumi Yuki, Shuntaro Takahashi, Hiroshi Furutani
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Publication number: 20180331093Abstract: A protection circuit includes: a high-side switch connected to a power terminal to which a predetermined power supply voltage VBB is supplied from an onboard battery; and an NMOS transistor MT1 connected to the high-side switch and configured to prevent an electrical conduction to the high-side switch when the onboard battery is reverse-connected to the power terminal, wherein a semiconductor integrated circuit is protected from a breakdown due to the reverse connection of the external power supply. A semiconductor integrated circuit apparatus includes the above-mentioned protection circuit configured to protect a semiconductor integrated circuit connected between the power terminal and the ground terminal, from an electro-static discharge breakdown. The protection circuit is connected to the clamp circuit unit inserted between the power terminal and the ground terminal, and is configured to protect the clamp circuit unit from a breakdown when the external power supply is reverse-connected.Type: ApplicationFiled: July 23, 2018Publication date: November 15, 2018Applicant: Rohm Co., Ltd.Inventors: Naoki Takahashi, Shuntaro Takahashi, Toru Takuma
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Publication number: 20180302083Abstract: This switch drive circuit drives a switch element. The switch drive circuit is provided with a signal input terminal, a disconnect circuit and a connect circuit. A control signal is input into the signal input terminal. The disconnect circuit includes a first switch which switches connection/disconnection of a line connecting the signal input terminal to a control terminal of the switch element, and when the switch element is to be turned off, the disconnect circuit performs a disconnection operation to disconnect the line using the first switch. The connect circuit includes a second switch which switches connection/disconnection between a certain point on the line, positioned on the control terminal side of the first switch, and a reference potential point, and when the switch element is to be turned off, the connect circuit performs a connection operation to connect the certain point to the reference potential point using the second switch.Type: ApplicationFiled: September 26, 2016Publication date: October 18, 2018Applicant: Rohm Co., Ltd.Inventor: Shuntaro Takahashi
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Publication number: 20180048140Abstract: An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.Type: ApplicationFiled: August 9, 2017Publication date: February 15, 2018Inventors: Toru TAKUMA, Shuntaro TAKAHASHI, Naoki TAKAHASHI
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Publication number: 20160336309Abstract: An overheat protection circuit has an NPN transistor, a power terminal to which a supply voltage is applied, a transmission path by which the supply voltage is transmitted from the power terminal to the collector of the NPN transistor without passing through a current source, and an output voltage generator that generates an output voltage commensurate with the base-emitter voltage of the NPN transistor.Type: ApplicationFiled: May 5, 2016Publication date: November 17, 2016Inventors: Hirofumi Yuki, Shuntaro Takahashi