Abstract: An exemplary anti-interference wiring assembly for a liquid crystal display device includes a base substrate (210), gate lines (201) formed at the base substrate, anti-interference wires (230), and data lines (202). The anti-interference wires are provided between the gate lines and the data lines and are insulated from the gate lines and the data lines respectively. The anti-interference wires are configured for carrying signals having a reverse phase compared to signals carried by the corresponding gate lines.

Abstract: An exemplary light source device (10) includes a power supply (12), a light source (14), and a photodetector (16). The photodetector includes a light sensor (17) and a resistor (18) connected in parallel. The power supply, the light source, and the photodetector are connected in series. When the intensity of ambient light increases, a resistance of the light sensor decreases so as to increase a light intensity of the light source. When the intensity of ambient light decreases, the resistance of the light sensor increases so as to decrease the light intensity of the light source.

Abstract: An exemplary thin film transistor substrate (30) includes a base substrate (31) and a gate electrode (32) formed on the base substrate. The gate electrode includes a bonding layer (321) formed on the base substrate and an electrically conductive layer (322) formed on the bonding layer. The bonding layer includes one of aluminum oxide and zirconium dioxide.

Abstract: A liquid crystal display panel includes a display area. The display area includes a first scanning line, two second scanning lines, and a number of pixel units arranged in two rows and a number of columns. The number of columns include a number of first columns and a number of second columns arranged alternately. The pixel units arranged in the number of first columns are controlled via the first scanning line, and the two pixel units arranged in each of the number of second columns are controlled via the two second scanning lines correspondingly.

Abstract: An exemplary repairing method includes providing a substrate having a plurality of conducting lines; detecting a broken position of one of the conducting lines; switching on a nozzle; and forming a copper layer at the broken position on the substrate. The repairing method of the present invention employing a repairing device for performing a chemical vapor deposition (CVD) method to forming the copper layer at a position of the broken defect of one of the conducting lines.

Abstract: An exemplary method for fabricating a polysilicon layer includes the following steps. A substrate (10) is provided and an amorphous silicon layer (12) is formed over the substrate. An excimer laser generator (13) for generating a pulse excimer laser beams collectively having the shape of a generally rectangular shaft is provided to melt a first area (15) of the amorphous silicon layer with the pulse excimer laser beams. The excimer laser generator is moved a distance to melt a second area of the amorphous layer spaced a short distance away from the first area. At least a subsequent third melted area spaced a short distance away from the second melted area is formed, with each subsequent melted area is spaced as short distance away from the immediately preceding melted area.

Abstract: The present invention relates to a TFT substrate and a manufacture method thereof. The TFT substrate includes a substrate, a plurality of signal lines, a common electrode, and a pixel electrode. The signal lines are arranged on the substrate along two perpendicular directions. One of two signal lines perpendicular to each other includes a plurality of segments. Every two segments closed to each other are arranged on two opposite sides of the other signal line of the two signal lines. The TFT substrate further includes a connecting signal line. The connecting signal line is connected to the two segments of the signal line composing a plurality of segments. The common electrode is arranged in a same layer as the connecting signal line and overlaps the signal line transferring image signals along a direction perpendicular to the substrate.

Abstract: A thin film transistor (TFT) substrate includes gate lines, data lines intersecting with the gate lines, a plurality of TFTs, pixel electrodes, and a common electrode insulating the gate lines, the data lines, the TFTs, and the pixel electrode. Each pixel electrode is connected to one of the gate lines and one of the data lines via one of the TFTs. A layer stack including an insulating layer and a passivation layer is sandwiched between the pixel electrodes and the common electrode.

Abstract: An exemplary liquid crystal panel includes a first substrate, a second substrate opposite to the first substrate, a light sensor disposed at an inner side of the first substrate, and a black matrix disposed at an inner side of the second substrate. The light sensor includes a light-sensing unit, and the black matrix includes a semi-transparent film corresponding to the light-sensing unit. A liquid crystal display device employing the liquid crystal panel is also provided.

Abstract: An exemplary electro-wetting display (EWD) device (30) includes: a first substrate (31); a second substrate (38) parallel to the first substrate; partition walls (34) arranged in a lattice on the second substrate thereby defining a plurality of pixel regions (P); a first fluid (35); and a second fluid (36). The first and second fluids are immiscible with each other and disposed between the first and second substrates. The second fluid is electro-conductive or polar. The first fluid is provided between the second substrate and the second fluid. Each pixel region includes two switch elements (315, 316) and a storage capacitor (336). The switch elements and the storage capacitor are disposed at a same side of the pixel region.

Abstract: An exemplary electro-wetting display (EWD) device includes a plurality of sub-pixel units. Each sub-pixel unit defines two opposite long sides and two opposite short sides. Each sub-pixel unit includes a first substrate, a second substrate facing toward the first substrate, a conductive first liquid and a polar second sandwiched between the first substrate and the second substrate, and an electrode. The first and second liquids are immiscible. The electrode is disposed at a surface of the second substrate facing the first liquid. The electrode defines an opening. A length of the opening as measured parallel to the nearest short side is not less than 0.8 times a length of the nearest short side.

Abstract: An exemplary electro-wetting display (EWD) includes a plurality of pixel regions, and each pixel region includes a first substrate; a second substrate opposite to the first substrate; a first conductive liquid disposed between the first and second substrates; a second, colored, non-conductive liquid disposed between the first and second substrates, and the second liquid being immiscible with the first liquid; and an electrode disposed at a surface of the second substrate adjacent to the first substrate. The electrode includes a cutout portion to define a containing space for receiving the second liquid while the pixel region displaying white. The electrode includes an edge corresponding to an edge of the cutout portion, and the edge of the electrode has a shape corresponding to a shape of an edge of the second liquid while being receiving in the containing space.

Abstract: An exemplary TFT array substrate includes an insulating substrate, a gate electrode provided on the insulating substrate, a gate insulating layer covering the gate electrode and the insulating layer, an amorphous silicon (a-Si) pattern formed on the gate insulating layer, a heavily doped a-Si pattern formed on the a-Si pattern, a source electrode formed on the gate insulating layer and the heavily doped a-Si pattern and a drain electrode formed on the gate insulating layer and the heavily doped a-Si pattern. The source electrode and the drain electrode are isolated by a slit formed between the source electrode and the drain electrode, and the a-Si pattern includes a high resistivity portion corresponding to the slit whose resistance is higher than a resistance of the a-Si material.

Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer covering the gate electrode and the substrate, an a-Si layer and a heavily doped a-Si layer on the gate insulating layer, a conductive film formed on the heavily doped a-Si layer, part of the a-Si layer, and the gate insulating layer, and a source electrode and a drain electrode on the conductive film. A work function of the conductive film is greater than a work function of the a-Si layer.

Abstract: An exemplary electrostatic discharge protection device includes: an electrostatic discharge part configured for discharging electrostatic when the electrostatic is larger than a threshold value; and a light emitting part configured for emitting light when electrostatic discharge happens.

Abstract: An exemplary PECVD device includes a first electrode (21), a second electrode (22) parallel to the first electrode, and a radio frequency (RF) circuit (23) providing energy for the two electrodes. The first electrode includes at least two separated sub-electrodes (211, 212). The RF circuit includes an RF power supply source (230) and at least two variable resistors (231, 232). The RF power supply source is connected to the at least two sub-electrodes via the at least two variable resistors respectively. The PECVD device can deposit a uniform thin film.

Abstract: An exemplary repairing method includes providing a substrate having a plurality of conducting lines; detecting a broken position of one of the conducting lines; switching on a nozzle; and forming a copper layer at the broken position on the substrate. The repairing method of the present invention employing a repairing device for performing a chemical vapor deposition (CVD) method to forming the copper layer at a position of the broken defect of one of the conducting lines.

Abstract: An exemplary projection display device (2) includes a color light system (20), a light valve (23), and a projecting structure (25). The color light system is configured for providing different color light beams. The light valve is configured for modulating the color light beams respectively. The projecting structure is configured for projecting the modulated color light beams passing through from the light valve.

Abstract: An exemplary display device (2) includes a display body (22) and a support body (23) configured for supporting and moving the display body. The support body includes at least one trolley wheel assembly (28) capable of moving horizontally, and at least one stopper (380) corresponding to the trolley wheel assembly, which is capable of braking the trolley wheel assembly. The display body is moved horizontally when the trolley wheel assembly is moved horizontally.

Abstract: An exemplary method for reducing leakage current of thin film transistors (TFTs) of a TFT array substrate (200) includes: providing a TFT array substrate, the TFT array substrate including a number of gate lines, a number of data lines, and a number of TFTs, each TFT including a gate electrode, a source electrode and a drain electrode, the gate electrodes being connecting to the gate lines, the source electrodes being connecting to the data lines; providing a same direct current voltage to the source electrodes and the drain electrodes; and providing another direct current voltage to the gate electrodes to turn off the TFTs, and continuing to provide said same direct current voltage to the source electrodes for a predetermined time.