Abstract: A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.

Abstract: A deposition ring comprises a ring body, a groove and a protrusion structure. The ring body is planar-ring shaped, and comprises a first surface. The groove and the protrusion structure are ring shaped and formed on the first surface. The protrusion structure is close to the groove and near an outer side of the ring body. The groove comprises a first side wall, a second side wall and a bottom. A curvature radius of the first side wall is larger than a curvature radius of the second side wall. The second side wall is a continuous ring shaped wall. The bottom is formed between the first side wall and the second side wall.

Abstract: A new method is provided for determining the optimum film thickness of a film that is to be deposited over a semiconductor surface. The invention observes the electrical current and the therefrom resulting torque that is supplied to a rotating part of a polishing apparatus, from this the CMP end-point can be determined for a reference film that has been deposited. This technique is known as the “CMP end-point detection” technique. The invention addresses observing CMP end-point curves for films of various thicknesses and compares these CMP end-point curves of one film thickness with each other and calculates a deviation for multiple layers (deposited on different wafers) of that film thickness. The process is repeated for different film thickness. The film thickness that has a deviation of the CMP end-point curve that closest resembles an optimum deviation is the film thickness that is selected as having the optimum thickness for the deposition of that film.