Abstract: A method and device for preparing a graphene-based polyethylene glycol phase change material.

Abstract: This application relates to an apparatus for producing a graphene film with a thermal manipulation function. The apparatus includes a filter cup, a filter flask, a vacuum pump, a fixing clamp, and a laser. The fixing clamp is configured to clamp a first filter membrane and a second filter membrane. The laser is configured to irradiate the first filter membrane. The first filter membrane and the second filter membrane are arranged stackedly. The filter cup and the filter flask are in snap fit up and down. The first filter membrane and the second filter membrane are arranged between the filter cup and the filter flask. The vacuum pump is in communication with the filter flask. This application also provides a method for producing the graphene film with a thermal manipulation function.

Abstract: A method for processing an ultra-high density interconnect wire under light source guidance, comprising preparing a photo-thermal response conductive paste, and putting it into an air pressure injector; driving the air pressure injector; the air pressure injector extrudes the photo-thermal response conductive paste, so that the photo-thermal response conductive paste is connected with the first chip to form an interconnection wire; stopping extruding the photo-thermal response conductive paste, and driving the air pressure injector to pull off the interconnection wire; a linear light source emits light and irradiates on the interconnection wire to bend to an upper side of a second chip bonding pad; an extrusion mechanism presses a free end of the interconnection wire on the second chip bonding pad; the first chip and the second chip are subjected to glue dripping encapsulation.

Abstract: A method for processing an ultra-high density interconnect wire under light source guidance, comprising preparing a photo-thermal response conductive paste, and putting it into an air pressure injector; driving the air pressure injector; the air pressure injector extrudes the photo-thermal response conductive paste, so that the photo-thermal response conductive paste is connected with the first chip to form an interconnection wire; stopping extruding the photo-thermal response conductive paste, and driving the air pressure injector to pull off the interconnection wire; a linear light source emits light and irradiates on the interconnection wire to bend to an upper side of a second chip bonding pad; an extrusion mechanism presses a free end of the interconnection wire on the second chip bonding pad; the first chip and the second chip are subjected to glue dripping encapsulation.

Abstract: The disclosure relates to a method for repairing an internal circuit break defect in a chip, including: S1, detecting the defect position of the chip and the type and performance parameters of a filling material; S2, positioning the chip on a two-dimensional motion platform; S3, setting parameters of two beams of laser; adjusting a focal length of the two beams of laser three-dimensional incident angle and a Z axis, so that a focus point of the two beams of laser irradiate any end of the circuit break of the chip; S4, the two-dimensional motion platform drives the chip to move, so that the focus point of the two beams of laser is moved to an other end of the circuit break, and an moving trajectory of the focus point of the two beams of laser feeds through the two ends of the circuit break of the chip.