Abstract: An output driver circuit according to the present invention provides level shifting and self-biased voltage protection. The output driver circuit includes first and second complementary data terminals, an output terminal. A pull-up and a pull-down transistor are coupled to the output terminal and have first and second control terminals, respectively. The second control terminal is coupled to the second data terminal. A differential transistor pair has control terminals coupled to the first and second data terminals, respectively, and defines first and second current paths. A cross coupled transistor pair is coupled in the first and second current paths and has a control output terminal coupled to the control terminal of the pull-up transistor. A self-biased voltage protection transistor is coupled between the pull-up transistor and the output terminal and has a control terminal coupled to the second current path, between the differential transistor pair and the cross coupled transistor pair.

Abstract: A current reference circuit includes a first, current mirror transistor having a gate coupled to a first feedback node, a source coupled to a first supply terminal and a drain forming a first reference node. A second, current mirror transistor has a gate coupled to the first feedback node, a source coupled to the first supply terminal and a drain forming a second reference node. A third transistor has a gate coupled to a second feedback node, a source coupled to a second supply terminal and a drain coupled to the first reference node. A fourth transistor has a gate coupled to the second feedback node, a source coupled to the second supply terminal and a drain coupled to the second reference node. A first operational amplifier has a first input coupled to the first reference node, a second input coupled to a bias node and an output forming the first feedback node.

Abstract: A process monitor and a method of using the same to determine the relative strength of a semiconductor fabrication process are disclosed. An impedance control output from an impedance controller circuit located on a semiconductor device is retrieved. Based upon a value of the retrieved impedance control output, the relative strength of the semiconductor fabrication process used to fabricate the semiconductor device is determined.