Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.

Abstract: A method for making a branched metal nanocatalyst including providing a first metal precursor solution having a first metal precursor, wherein providing the first metal precursor solution includes combining a first metal ion source and a first alkylamine, and providing a second metal precursor solution, wherein providing the second metal precursor solution includes combining a second metal ion source and a second alkylamine, heating the second metal precursor solution, combining the first metal precursor solution with the second metal precursor solution to provide a reaction solution, and holding the reaction solution at an elevated temperature for a reaction time to provide a branched metal nanocatalyst. Also described are nanocatalysts prepared according to the method.

Abstract: Aspects of the present disclosure generally relate to copper-containing bimetallic structures, to processes for producing the copper-containing bimetallic structure, and to uses of the copper-containing bimetallic structures as, e.g., catalysts. In an aspect, a process for forming a bimetallic structure is provided. The process includes forming a mixture comprising a first precursor and a second precursor, the first precursor comprising copper, the second precursor comprising a phosphine. The process further includes introducing a third precursor with the mixture to form the bimetallic structure, the third precursor comprising a Group 8-10 metal, the bimetallic structure comprising copper (Cu), the Group 8-10 metal (M), phosphorous (P), and nitrogen (N), the bimetallic structure having the formula (Cu)a(M)b(P)c(N)d, wherein a molar ratio of a:b is from about 1:99 to about 99:1, and a molar ratio of a:(c+d) is from about 500:1 to about 1:1.

Abstract: Aspects described herein generally relate to bimetallic structures, syntheses thereof, and uses thereof. In an embodiment, a process for forming a bimetallic nanoframe is provided. The process includes forming a first bimetallic structure by reacting a first precursor comprising platinum (Pt) and a second precursor comprising a Group 8-11 metal (M2), wherein M2 is free of Pt; reacting a third precursor comprising Pt with the first bimetallic structure to form a second bimetallic structure, the second bimetallic structure having a higher molar ratio of Pt to Group 8-11 metal than the first bimetallic structure; and introducing the second bimetallic structure with an acid to form the bimetallic nanoframe, the bimetallic nanoframe having a higher molar ratio of Pt to Group 8-11 metal than that of the second bimetallic structure, the bimetallic nanoframe having the formula: (Pt)a(M2)b, wherein: a is the amount of Pt; b is the amount of M2.

Abstract: Aspects described herein generally relate to bimetallic structures, syntheses thereof, and uses thereof. In an embodiment, a process for forming a bimetallic nanoframe is provided. The process includes forming a first bimetallic structure by reacting a first precursor comprising platinum (Pt) and a second precursor comprising a Group 8-11 metal (M2), wherein M2 is free of Pt; reacting a third precursor comprising Pt with the first bimetallic structure to form a second bimetallic structure, the second bimetallic structure having a higher molar ratio of Pt to Group 8-11 metal than the first bimetallic structure; and introducing the second bimetallic structure with an acid to form the bimetallic nanoframe, the bimetallic nanoframe having a higher molar ratio of Pt to Group 8-11 metal than that of the second bimetallic structure, the bimetallic nanoframe having the formula: (Pt)a(M2)b, wherein: a is the amount of Pt; b is the amount of M2.

Abstract: Aspects described herein generally relate to bimetallic structures, syntheses thereof, and uses thereof. In an embodiment, a process for forming a bimetallic nanoframe is provided. The process includes forming a first bimetallic structure by reacting a first precursor comprising platinum (Pt) and a second precursor comprising a Group 8-11 metal (M2), wherein M2 is free of Pt; reacting a third precursor comprising Pt with the first bimetallic structure to form a second bimetallic structure, the second bimetallic structure having a higher molar ratio of Pt to Group 8-11 metal than the first bimetallic structure; and introducing the second bimetallic structure with an acid to form the bimetallic nanoframe, the bimetallic nanoframe having a higher molar ratio of Pt to Group 8-11 metal than that of the second bimetallic structure, the bimetallic nanoframe having the formula: (Pt)a(M2)b, wherein: a is the amount of Pt; b is the amount of M2.

Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.

Abstract: Aspects of the present disclosure generally relate to catalyst compositions, processes for producing such catalyst compositions, and uses of such catalyst compositions. In an embodiment, a composition is provided. The composition includes an electrolyte material or an ion thereof, an amphiphile material or an ion thereof, and a metal component, the metal component comprising an alloy having the formula (M1)a(M2)b, wherein M1 is a Group 10-11 metal of the periodic table of the elements, M2 is a first Group 8-11 metal of the periodic table of the elements, M1 and M2 are different, and a and b are positive numbers. In another embodiment, a device is provided that includes an electrolyte material or ion thereof, an amphiphile material or ion thereof, and a metal component disposed on an electrode, the metal component comprising a bimetallic nanoframe, a trimetallic nanoframe, or a combination thereof.

Abstract: A hollow, two-dimensional nanostructure having a plurality of first metal atoms and a plurality of second metal atoms, the first metal being copper, nickel, cobalt, iron, or a combination thereof and the second metal being gold, platinum, palladium, or a combination thereof.

Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.

Abstract: Aspects of the present disclosure generally relate to copper-containing bimetallic structures, to processes for producing the copper-containing bimetallic structure, and to uses of the copper-containing bimetallic structures as, e.g., catalysts. In an aspect, a process for forming a bimetallic structure is provided. The process includes forming a mixture comprising a first precursor and a second precursor, the first precursor comprising copper, the second precursor comprising a phosphine. The process further includes introducing a third precursor with the mixture to form the bimetallic structure, the third precursor comprising a Group 8-10 metal, the bimetallic structure comprising copper (Cu), the Group 8-10 metal (M), phosphorous (P), and nitrogen (N), the bimetallic structure having the formula (Cu)a(M)b(P)c(N)d, wherein a molar ratio of a:b is from about 1:99 to about 99:1, and a molar ratio of a:(c+d) is from about 500:1 to about 1:1.

Abstract: Aspects of the present disclosure generally relate to functionalized metals, to processes for producing functionalized metals, and to uses of functionalized metals as, e.g., sensing materials for chemiresistive sensors. In an aspect, a process for producing a functionalized metal is provided. The process includes introducing, under first conditions, a first precursor comprising a Group 10 to Group 14 metal with an amine to form a second precursor comprising the Group 10 to Group 14 metal. The process further includes introducing, under second conditions, the second precursor with a third precursor to form the functionalized metal, the third precursor comprising an organic material having the formula HS—R—COOH, wherein R is an unsubstituted hydrocarbyl, a substituted hydrocarbyl, an unsubstituted alkoxy, or a substituted alkoxy.

Abstract: A method for preparing a hollow multi-metallic nanostructure, the method including the steps of providing a first metal nanostructure having a plurality of first metal atoms, and performing a synthetic strategy, the synthetic strategy including replacing a portion of the plurality of first metal atoms with a corresponding number of second metal ions, and promoting first metal atom diffusion to provide the hollow multi-metallic nanostructure.

Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.

Abstract: The present disclosure relates to a method for synthesizing Pd nanocubes having an average size less than 10 nm. The reaction temperature, reaction time, and molar ratios of TOP/Pd-OLA can be used to control size and formation of the Pd nanocubes. The present disclosure is also directed to Pd nanocubes, less than 10 nm, having face centered cubic structures. Pd nanocubes of the present disclosure are an effective catalyst for CO2 reduction reaction with excellent selectivity for CO. Small sized Pd nanocubes can be used not only as the seeds to prepare other metal nanocubes, but can also as powerful catalysts for a wide variety of reactions in different industrial processes.

Abstract: The present disclosure relates to a method for synthesizing Pd nanocubes having an average size less than 10 nm. The reaction temperature, reaction time, and molar ratios of TOP/Pd-OLA can be used to control size and formation of the Pd nanocubes. The present disclosure is also directed to Pd nanocubes, less than 10 nm, having face centered cubic structures. Pd nanocubes of the present disclosure are an effective catalyst for CO2 reduction reaction with excellent selectivity for CO. Small sized Pd nanocubes can be used not only as the seeds to prepare other metal nanocubes, but can also as powerful catalysts for a wide variety of reactions in different industrial processes.

Abstract: A method for preparing copper-solver and copper-gold porous microsheets with specific pore sizes, the method including the steps of providing a solution of copper microsheets and adding a silver or gold solution under controlled temperature, the reaction conditions can be changed to determine pore sizes.

Abstract: Methods for preparing selective catalytic metal microstructures and nanostructures having at least one surface ligand. The methods include providing a preliminary metal microstructure or nanostructure having at least one preliminary surface ligand, and replacing the preliminary surface ligand with at least one surface ligand to provide the catalytic metal microstructure or nanostructure.

Abstract: Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.

Abstract: A method for preparing copper nanocubes with specific facets and uniform size, the method comprising combining a copper complex solution in a reaction mixture with a ligand. Using a ligand of pure, unoxidized tributylphosphine, uniform copper nanocubes with six facets are prepared.