Abstract: The embodiments of the present disclosure provide a reset method, a reset device, a reset system and a pixel array using the same. The reset method includes an electric charge accumulation unit being configured to store a first electric charge and an electric charge storage unit being configured to store a second electric charge. A polarity of the first electric charge is opposite to a polarity of the second electric charge. The reset method includes controlling the electric charge storage unit to obtain the second electric charge; and resetting the electric charge accumulation unit so as to transfer a preset amount of the second electric charge from the electric charge storage unit to the electric charge accumulation unit, which includes a third port of the control module applying a control voltage to a second end of the electric charge storage unit; and meanwhile charging the electric charge storage unit during the process of transferring the second electric charge.

Abstract: Disclosed are a decoherence processing method and system, and a coherent light receiving apparatus. The coherent light receiving apparatus comprises a plurality of photoelectric conversion units. The method comprises: performing phase comparison between electric signals, obtained by means of conversion performed by at least two of a plurality of photoelectric conversion units, and a reference signal to obtain a corresponding phase difference; according to the obtained phase difference, respectively performing phase compensation on the electric signals obtained by means of conversion performed by the at least two photoelectric conversion units, so as to obtain at least two compensated electric signals of the photoelectric conversion units; and using the at least two compensated electric signals of the photoelectric conversion units to superpose and output electric signals.

Abstract: A pixel unit and a manufacturing method thereof, a sensor, and a sensor array are provided. The pixel unit comprises: a photosensitive unit, configured to generate a photo-generated carrier according to received radiation; at least two transmission units, connected between the photosensitive unit and at least two floating diffusion nodes, and configured to transfer the photo-generated carrier from the photosensitive unit to the at least two floating diffusion nodes; and the at least two floating diffusion nodes, configured to store and output the photo-generated carrier generated by the photosensitive unit. Among the at least two floating diffusion nodes, the floating diffusion node spaced by more transmission units from the photosensitive unit has a lower electric potential.

Abstract: A semiconductor element, a semiconductor element preparing method, and a solid state imaging apparatus. The semiconductor element comprises: a group of first modulation grids, a group of second modulation grids, a semiconductor region, a first storage region, and a second storage region. The group of first modulation grids and the group of second modulation grids are respectively provided with different voltages, the potential of a signal charge transfer path in the semiconductor region is changed, and signal charges are controlled to move along a second direction; the first storage region is directly connected to the first modulation grids, so that when the voltage of the first storage region is higher than the voltage of the first modulation grids, and the first storage region attracts first signal charges retained in the first modulation grids.

Abstract: A decoherent effect processing device, a decoherent effect processing system, and a method therefor. A circuit comprises a signal acquisition module and a processing module, the output end of the signal acquisition module being connected to the input end of the processing module; the signal acquisition module is configured to acquire coherent light and convert the coherent light into a first signal having polarities; and the processing module is configured to depolarize the first signal to obtain related values of the first signal.

Abstract: A photodiode manufacturing method and a photodiode thereof. The method comprises: doping a second type of material in a first region of an epitaxial layer to form a first doped region; forming a transfer gate on the upper surface of the epitaxial layer, one side of the transfer gate being connected to the first doped region; doping the second type of material in a second region of the epitaxial layer to form a second doped region, the second doped region being connected to the first doped region; and doping the second type of material in a third region of the epitaxial layer to obtain an output region, the other side of the transfer gate being connected to the output region.

Abstract: The present application provides a radiation output device and a method. The radiation output device includes a radiation generating module configured to generate initial radiation; a filter module configured to reflect a portion of a first preset wavelength of the initial radiation to the radiation generating module and transmit a portion of a second preset wavelength of the initial radiation, the transmitted radiation is therefore used as an output radiation of the radiation output device; a detection feedback module, using a portion of or all of the output radiation as a feedback radiation, configured to instruct a modulating module to modulate the filter module according to the feedback radiation. The modulating module is connected to the filter module and configured to modulate a position and/or an angle of the filter module according to the instruction of the detection feedback module.

Abstract: The present application provides a pixel unit, a sensor and a sensing array. The pixel unit includes a charge collecting area configured to receive radiation to generate photo-generated charge; a transmission gate connected between the charge collecting area and a floating diffusion nod and configured to transfer the photo-generated charge from the charge collecting area to the floating diffusion nod; an electric potential adjustment area disposed at a periphery of the charge collecting area and configured to concentrate the photo-generated charge to a side of a connection between the charge collecting area and the transmission gate.

Abstract: The embodiments of the present disclosure provide a reset method, a reset device, a reset system and a pixel array using the same. The reset method includes an electric charge accumulation unit being configured to store a first electric charge and an electric charge storage unit being configured to store a second electric charge. A polarity of the first electric charge is opposite to a polarity of the second electric charge. The reset method includes controlling the electric charge storage unit to obtain the second electric charge; and resetting the electric charge accumulation unit so as to transfer a preset amount of the second electric charge from the electric charge storage unit to the electric charge accumulation unit, which includes a third port of the control module applying a control voltage to a second end of the electric charge storage unit; and meanwhile charging the electric charge storage unit during the process of transferring the second electric charge.

Abstract: A signal separation method, a pixel unit, and a pixel array are provided. The method comprises: determining a first threshold voltage between a first primary node of at least two primary nodes that stores first radiation charges and an adjacent subsequent-stage and controlling, when a second primary node of the at least two primary nodes that stores second radiation charges is electrically connected with an adjacent subsequent-stage node, a second threshold voltage between the second primary node and the adjacent subsequent-stage node so that echo radiation charges in the second radiation charges are transferred to the subsequent-stage The second threshold voltage is equal to the first threshold voltage; the first threshold voltage is used to make the background radiation charges included in the first radiation charges fully or partially remain in the first primary node when the first primary node is electrically connected with the subsequent-stage node.

Abstract: Provided are a photodiode and a manufacturing method, a sensor and a sensor array. The photodiode comprises: a semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; and a photodiode region formed in a pre-determined region of the epitaxial layer and used for generating photo-generated carriers, wherein the photodiode region comprises at least two doped regions, and the doped regions of different potentials from among the at least two doped regions are arranged from the edge of the photodiode region to the geometric center of the photodiode region. By means of the photodiode, photo-generated carriers randomly distributed in a photodiode region are first concentrated at a specified position and then reach a transmission gate through the specified position, thereby significantly improving the response speed and measurement accuracy of the photodiode.

Abstract: A counting method, a counting device, and a counting system and a pixel array using the counting device are provided. The counting device includes a storage module, which comprises multiple storage units in cascade interconnection, the multiple storage units store a plurality of cumulative count values, the multiple storage units are configured as at least one group of storage units; an arithmetic module connected to a first group of storage units and a last group of storage units for calculation according to a received count value and an added cumulative count values input through the last group of the storage units so as to obtain a current added cumulative count values of corresponding objects, which is then output to the first group of the storage units in cascade interconnection.

Abstract: A distance measurement method, a distance measurement sensor, and a distance measurement sensing array, for use in improving the signal-to-noise ratio of a distance measurement system and increasing the distance measurement accuracy and a distance measurement distance.

Abstract: A signal separation method, a pixel unit, and a pixel array are provided. The method comprises: determining a first threshold voltage between a first primary node of at least two primary nodes that stores first radiation charges and an adjacent subsequent-stage and controlling, when a second primary node of the at least two primary nodes that stores second radiation charges is electrically connected with an adjacent subsequent-stage node, a second threshold voltage between the second primary node and the adjacent subsequent-stage node so that echo radiation charges in the second radiation charges are transferred to the subsequent-stage The second threshold voltage is equal to the first threshold voltage; the first threshold voltage is used to make the background radiation charges included in the first radiation charges fully or partially remain in the first primary node when the first primary node is electrically connected with the subsequent-stage node.

Abstract: A pixel unit and a manufacturing method thereof, a sensor, and a sensor array are provided. The pixel unit comprises: a photosensitive unit, configured to generate a photo-generated carrier according to received radiation; at least two transmission units, connected between the photosensitive unit and at least two floating diffusion nodes, and configured to transfer the photo-generated carrier from the photosensitive unit to the at least two floating diffusion nodes; and the at least two floating diffusion nodes, configured to store and output the photo-generated carrier generated by the photosensitive unit. Among the at least two floating diffusion nodes, the floating diffusion node spaced by more transmission units from the photosensitive unit has a lower electric potential.

Abstract: A self-tracking analog-to-digital converter includes a digital-to-analog converter (DAC) adapted to provide a variable reference voltage, a windowed flash analog-to-digital converter (ADC) adapted to provide an error signal ek corresponding to a difference between an input voltage Vi and the variable reference voltage, and digital circuitry adapted to generate suitable control signals for the DAC based on the error signal ek. More particularly, the digital circuitry includes a first digital circuit adapted to provide a first function value f(ek) in response to the error signal ek, the first function value f(ek) representing an amount of correction to be applied to the variable reference voltage. A second digital circuit is adapted to provide a counter that combines the first function value f(ek) with a previous counter state Nk to provide a next counter state Nk+1, the next counter state Nk+1 being applied as an input to the digital-to-analog converter.

Abstract: A self-tracking analog-to-digital converter includes a digital-to-analog converter (DAC) adapted to provide a variable reference voltage, a windowed flash analog-to-digital converter (ADC) adapted to provide an error signal ek corresponding to a difference between an input voltage Vi and the variable reference voltage, and digital circuitry adapted to generate suitable control signals for the DAC based on the error signal ek. More particularly, the digital circuitry includes a first digital circuit adapted to provide a first function value f(ek) in response to the error signal ek, the first function value f(ek) representing an amount of correction to be applied to the variable reference voltage. A second digital circuit is adapted to provide a counter that combines the first function value f(ek) with a previous counter state Nk to provide a next counter state Nk+1, the next counter state Nk+1 being applied as an input to the digital-to-analog converter.

Abstract: An amplitude of a differential output signal at a differential multiplexer is maximized by presenting, in response to a differential selection signal, a high impedance to each output port of each differential transistor of a non-selected differential transistor pair. A differential input signal is received at each differential transistor pair. Each transistor of each differential transistor pair is connected to a current source through an independent selection transistor. In response to the differential selection signal, each of the selection transistors is placed in an off state resulting in a high impedance between the output ports of the transistors of the non-selected differential transistor pair.