Abstract: A tumor radiotherapy planning design method and apparatus, an electronic device, and a computer storage medium are provided, including: obtaining a current optimization parameter vector set, and calculating a current cost function value; randomly correcting the current optimization parameter vector set to generate alternative optimization parameter vector sets; then performing planning parameter optimization, and calculating corresponding total cost function values; determining current optimal or suboptimal alternative optimization parameter vector sets according to the total cost function values, sampling to update the current optimization parameter vector set and the current cost function value according to the total cost function values of the current alternative optimization parameter vector sets, and then performing an iteration repeatedly until a convergence condition is satisfied; and outputting an optimal optimization parameter vector set after the iteration, determining planning parameters, and calcu

Abstract: The present application discloses a dispatching and control cloud data processing method, device and system. The method includes the following operations: pilot node device acquires a global scheduling task, decomposes the global scheduling task to obtain scheduling tasks, issues the scheduling tasks to collaborative node device, acquires data collection ranges and data processing rules of the collaborative node devices, and delivers them to the collaborative node devices; the collaborative node devices receive and execute the scheduling tasks issued by the pilot node device; receives the data collection ranges and the data processing rules issued by the pilot node device, acquires, based on the scheduling tasks, collected data in the data collection ranges, processes the acquired collected data according to the data processing rules to obtain the processed data, uploads the processed data to the pilot node device; the pilot node device receives the processed data uploaded by the collaborative node devices.

Abstract: A semiconductor structure, a semiconductor assembly and a power semiconductor device. The semiconductor structure includes: a P-type semiconductor material layer; an N-type semiconductor material layer adjacent to the P-type semiconductor material layer, wherein the N-type semiconductor material layer and the P-type semiconductor material layer together from a PN junction; and a plurality of insulating material layers located outside the PN junction and distributed along the superposition direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein the relative dielectric constants of the adjacent insulating material layers are different.

Abstract: A high-frequency absorption diode chip and a making method. The chip comprises a substrate; an epitaxial layer; a base region window; the base region window comprises a pressure point region and a partial pressure region; the epitaxial layer separates the pressure point region from the partial pressure region; a first ion diffusion layer is formed on the base region window; an emitting region window is provided on the first ion diffusion layer; a second ion diffusion layer is formed on the emitting region window; the upper surfaces of the first ion diffusion layer and the second ion diffusion layer in the pressure point region both are provided with a passivation layer; the upper surface of the first ion diffusion layer in the partial pressure region is provided with an oxide layer; both the oxide layer and the passivation layer extend to the upper surface of the epitaxial layer.

Abstract: A semiconductor structure, a semiconductor assembly and a power semiconductor device. The semiconductor structure includes: a P-type semiconductor material layer; an N-type semiconductor material layer adjacent to the P-type semiconductor material layer, wherein the N-type semiconductor material layer and the P-type semiconductor material layer together from a PN junction; and a plurality of insulating material layers located outside the PN junction and distributed along the superposition direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein the relative dielectric constants of the adjacent insulating material layers are different.

Abstract: A process of manufacture of high voltage (300-600V) and high current (10-100 A) Schottky diode, which includes the following steps in sequence: provide a N-type silicon wafer; process phosphor deposition and high-concentration N+ phosphorus diffusion; cutting and chemical mechanical polishing; classifying into different voltage groups; processing primary oxidation and lithography; processing boron diffusion, secondary lithography and wiring; process ion implantation and metal spluttering to form the Schottky barrier; process metal evaporation and lithography for front metal; and finally process etching and metal evaporation for rear metal. Instead of the conventional epitaxial process, a diffusion process is employed to form the N+ layer. The final product is equipped with the advantages of Schottky diode and is applicable for high voltage of 300-600V and high current of 10-100 A. The current leakage and defect rate are dramatically lowered while the cost is lowered, thus mass production is facilitated.

Abstract: Method and system for supplying emergency power to nuclear power plant, wherein the method includes, providing accumulator battery system, connected to emergency bus, the accumulator battery system is monitored by online monitoring system; in case of power loss of electrical devices of the nuclear power plant, the online monitoring system starts the accumulator battery system to provide power supply to the electrical devices of the nuclear power plant via the emergency bus. The present application is adapt to the key technologies and battery management technologies of million kilowatt-class advanced pressurized water reactor nuclear power plant, facilitating to improve the safety of the nuclear power plant in case of serious natural disasters beyond design working conditions.

Abstract: Method and system for supplying emergency power to nuclear power plant, wherein the method includes, providing accumulator battery system, connected to emergency bus, the accumulator battery system is monitored by online monitoring system; in case of power loss of electrical devices of the nuclear power plant, the online monitoring system starts the accumulator battery system to provide power supply to the electrical devices of the nuclear power plant via the emergency bus. The present application is adapt to the key technologies and battery management technologies of million kilowatt-class advanced pressurized water reactor nuclear power plant, facilitating to improve the safety of the nuclear power plant in case of serious natural disasters beyond design working conditions.