Abstract: A method of forming a pattern comprising the steps of forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate, irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate, and removing the predetermined portion of the film irradiated by the actinic radiation by dissolving it with an aqueous alkaline developing solution. ##STR1## wherein Ar is a substituted or non-substituted aryl group.

Abstract: A glass composite material comprising a polymer chain selected from the group consisting of polysilane, polygermane, polystannane and a copolymer thereof, and a network structure of a metal oxide consisting of a metal atom bonded to the other metal atom through an oxygen atom, wherein the polymer chain is chemically crosslinked with a glass matrix of the network structure of the metal oxide directly or indirectly, and a volume resistivity measured by setting a ratio of a voltage to a film thickness at 10.sup.6 V/cm according to a disc plate electrode method is not more than 3.times.10.sup.6 .OMEGA.cm.

Abstract: Disclosed herein is a curing catalyst comprising at least one compound which is a substituted or unsubstituted aromatic or heteroaromatic compound and having any one of groups (I) --O--R.sub.1, (II) --O--CY--R.sub.1, or (III) --O--CY--X--R.sub.1, the groups being directly bonded to the armoatic or heteroaromatic ring, in a number of 1 to 10 wherein R.sub.1 may be the same or different and is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, X is O or NH and Y is O or S. Furthermore, an epoxy resin composition comprising the curing catalyst is disclosed.

Abstract: A glass composite material comprising a polymer chain selected from the group consisting of polysilane, polygermane, polystannane and a copolymer thereof, and a network structure of a metal oxide consisting of a metal atom bonded to the other metal atom through an oxygen atom, wherein the polymer chain is chemically crosslinked with a glass matrix of the network structure of the metal oxide directly or indirectly, and a volume resistivity measured by setting a ratio of a voltage to a film thickness at 10.sup.6 V/cm according to a disc plate electrode method is not more than 3.times.10.sup.6 .OMEGA.cm.

Abstract: Disclosed is a resin composition excellent in mechanical and electrical properties. The composition contains an inorganic filler such as fused silica or silicon nitride having the surface covered with a substance resulting from decomposition of a polysilane compound and a base resin such as an epoxy resin or a maleimide resin.

Abstract: A method of manufacturing a colored material wherein ultraviolet rays are irradiated onto an organic silicon compound film having any one of repeating units represented by the following general formulas (1) to (3), and then the film is heat-dried to turn the film into a three-dimensional structure. This process is repeated for each of R, G and B. As a result, a color filter provided with a color layer comprising a three-dimensional structure composed of silicon atom having one Si--C bond and formed through Si--O--Si bonds, and having a plurality of regions containing three different colors of R, G and B are contained therein can be manufactured. ##STR1## wherein R.sup.1 is a substituted or non-substituted hydrocarbon group, R.sup.2 is a substituted or non-substituted hydrocarbon group or acyl group, and R.sup.3 is a substituted or non-substituted silyl group or polysilane skeleton.

Abstract: A thermosetting resin composition, containing (A) a thermosetting resin; (B) a curing agent for the thermosetting resin; (C) a polysilane copolymer; and (D) an inorganic filler; wherein the polyailane copolymer (C) is added in amount of about 0.1 to 10% by weight based on the total amount of the resin composition.

Abstract: A polyimide precursor having a molecular structure obtained by polymerizing (a) 0.97 to 1.03 molar equivalent of a diamine component containing 0.40 molar equivalent or more of aromatic diamine compound represented by the general formula (DA1), and (b) an acid anhydride component containing (1-n.sub.1 /2) molar equivalent of a tetracarboxylic dianhydride and n.sub.1 molar equivalent of at least one selected from the group consisting of maleic anhydride and maleic derivative anhydride, wherein n.sub.1 ranges from 0.02 to 0.40.

Abstract: A polysilane composition containing conductor or semiconductor particles useful as a portion of a non-linear optical device.

Abstract: A non-linear optical device is disclosed, which comprises an optical waveguide complex wherein a part of the waveguide complex is formed of a non-linear element containing a polysilane having an average weight of 5,000 to 1,000,000 and having a repeating unit represented by formula ##STR1## Where R.sup.1 and R.sup.2 are independently selected from the group consisting of a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted aralkyl group, and particles having a particle size of 10 to 500 .ANG. selected from the group consisting of conductors, semiconductors, and mixture thereof.

Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.

Abstract: A polysilane composition containing conductor or semiconductor particles useful as a portion of a non-linear optical device.

Abstract: A thermosetting resin composition containing a silane compound a) having at least one phenolic hydroxyl group, and an organic compound b) having at least two functional groups capable of reaction with the phenolic hydroxyl group of the silane compound, wherein the silane compound a) is added in an amount of more than 10 parts by weight relative to 100 parts by weight of the organic compound b).

Abstract: Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.

Abstract: There is disclosed an organic field effect element having an large ON/OFF current ratio. The organic field effect element includes a source electrode and a drain electrode formed separately to each other, a first organic layer constituting a channel between the source and drain electrodes, a second organic layer formed to be adjacent to the channel and having a carrier concentration different from that of the first organic layer, and a gate electrode formed to be opposite to the channel through the second organic layer. Carriers are transferred between the second and first organic layers in response to a voltage applied to the gate electrode to change an electrical conductivity of the channel.

Abstract: Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.

Abstract: Disclosed is a polysilane having a repeating unit represented by general formula (1) given below. Also disclosed is a polysilane composition, comprising a polysilane having a repeating unit represented by general formula (2) given below and a cross linking agent: ##STR1## where, each of R.sup.1 and R.sup.3 is hydrogen, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms; R.sup.2 is a divalent hydrocarbon group having to 24 carbon atoms which can be substituted; R.sup.4 is a covalent bond, or a substituted or unsubstituted alkylene group having 1 to carbon atoms, or a substituted or unsubstituted arylene group having 6 to 24 carbon atoms; each of R.sup.5 to R.sup.9 is hydrogen, a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms, a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, or hydroxyl group, at least one of R.sup.5 to R.sup.

Abstract: Disclosed is a photosensitive resin composition for forming a polyimide film pattern. The composition contains a polyamic acid and at least one silyl ketone compound represented by general formula (II) given below, ##STR1## where each of R.sup.3 to R.sup.16 is a are substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, each of R.sup.5 to R.sup.16 may be a substituted or unsubstituted silyl group, and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1. The composition further contains a sensitizer, as required. A semiconductor substrate is coated with the composition, followed by exposing the coating through a predetermined mask and subsequently developing and heat-treating the coating so as to form a polyimide film pattern.

Abstract: A photosensitive composition contains a polymer having a unit represented by formula I, and a photosensitive agent: ##STR1## wherein each of R.sub.1 to R.sub.4 represents a hydrogen atom, an alkyl group, an alkoxyl group, or a substituted or non-substituted allyl group, at least one of R.sub.1 to R.sub.4 being an alkyl groups having 1 to 10 carbon atoms and containing silicon, l represents a positive integer, and each of a and b represents an integer from 1 to 3, and c represents an integer from 0 to 2, a+b+c not exceeding 4.

Abstract: A photo-curable epoxy resin type composition which comprises (a) an epoxy resin, (b) at least one compound selected from the group consisting of (i) a compound having a group, other than an imido group, which is represented by the formula --CONH and (ii) an aromatic amine, (c) an organic metal compound, where said metal is selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, aluminum and zirconium; and (d) an organic silicon compound having at least one group selected from the group consisting of a peroxysilyl group and an o-nitrobenzyloxy group capable of forming a silanol group by irradiation with light. The photo-curable epoxy resin type composition according to this invention is capable of readily curing by light (ultraviolet ray in particular) and also capable of heat curing at a temperature of 150.degree. C.