Abstract: A microwave plasma processing apparatus for dry etching or ashing in a fabricating process for an integrated circuit semiconductor device is improved to provide a higher processing rate. The apparatus comprises a plasma generating region formed in a part of a waveguide through which microwave power is transmitted. A reactive gas is introduced into the plasma generating region and a plasma is generated by the microwave power applied thereto. A reacting region is coupled to the plasma generating region through a shielding member, wherein radicals of the reactive gas generated in the plasma enter the reacting region through the shielding member. The plasma generating region, the reacting region and an evacuating device comprise a vacuum system and establish a fixed gas pressure for the reactive gas. The radicals (active species) react with an object placed in the reacting region, forming volatile compounds which are removed by the evacuating device.

Abstract: In the manufacture of a semiconductor device wherein a plurality of patterns are successively superimposed and printed on a semiconductor substrate, the invention offers a novel and useful method which includes (a) printing and forming on the semiconductor substrate a first pattern which includes a first alignment mark, (b) in forming a second pattern on the substrate, positioning and printing a second alignment mark contained in a second pattern relative to the first alignment mark on the substrate in such a manner that at least one part of the contour of the first mark is offset from that of the second mark, and is spaced a minute distance from it, and (c) in forming a third pattern on the substrate, positioning and printing a third alignment mark contained in a third pattern in such a manner that a part of the contour of the third alignment mark is offset from a part of the contour of the first alignment mark, and at least a part of the other portion of the contour of the third alignment mark is similarly

Abstract: A spinner comprises a rotating spindle for causing a workpiece to spin at a high speed, and a cup disposed around the spindle and provided at a bottom wall thereof with a port for air evacuation. The cup comprises a deflector ring disposed in the interior of the cup and extending inwardly, the deflector ring having an annular barrier at the inner peripheral edge for defining steps projecting from the upper and lower surfaces of the ring, respectively, and the barrier having an inner peripheral surface formed to diverge at least upwardly with respect to the axis of the spindle.