Patents by Inventor Shuzo Kudo

Shuzo Kudo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6306351
    Abstract: The present invention relates to a nitrogen oxide detecting element. Although there has been a demand for effecting detection of a nitrogen oxide by using a semiconductor type gas sensor, no semiconductor type sensors have existed which can detect the nitrogen oxide with good selectivity against other interfering gases (CO, H2) for an extended period of time with good durability. Then, by causing a gas detecting portion to include an oxide containing more than a predetermined amount of Bi and maintaining this gas detecting portion at a temperature range where its electron-conductivity is exhibited, it has become possible to detect the nitrogen oxide.
    Type: Grant
    Filed: January 4, 1999
    Date of Patent: October 23, 2001
    Assignee: Osaka Gas Co., Ltd.
    Inventors: Shuzo Kudo, Katsuki Higaki, Hisao Ohnishi
  • Patent number: 5980833
    Abstract: A carbon monoxide sensor including a gas detecting portion and at least a pair of electrodes, wherein the gas detecting portion includes a metal oxide represented by a following formula;Cu.sub.1-x Bi.sub.x O.sub.y(0<x<1 and 1<y<1.5).
    Type: Grant
    Filed: June 27, 1997
    Date of Patent: November 9, 1999
    Assignee: Noritsu Koki Co. Ltd
    Inventors: Katsuki Higaki, Shuzo Kudo, Hisao Ohnishi, Soichi Tabata, Osamu Okada, Yosuke Nagasawa
  • Patent number: 5863503
    Abstract: A nitrogen oxide detecting sensor, according to the present invention, incorporates a gas detecting portion including, as a main component thereof, an oxide compound having electric conductivity or semiconductivity, the oxide compound having a crystal structure of 2212 phase and expressed generally as: Bi.sub.2 Sr.sub.2 (Ca.sub.1-x Y.sub.x)Cu.sub.2 O.sub.8.+-..delta. where 0.6.ltoreq.x<1; 0.ltoreq..delta..ltoreq.1. Electrodes are electrically connected to the gas detecting portion. When the gas detecting portion is analyzed by X-ray diffraction using cuK.alpha. rays to obtain diffraction peak values thereof in the range of a diffraction angle between 5.degree. and 65.degree., the diffraction peak values having a sum .SIGMA. I?2212! expressed by one of the following:(a) .SIGMA. I?2212!/.SIGMA. I?T!>88.1%(b) {.SIGMA. I?2212!+.SIGMA. I?2201!}/.SIGMA. I?T!>94.8%(c) {.SIGMA. I?2212!+.SIGMA. I?Y.sub.2 O.sub.3 !} .SIGMA. I?T!>88.1%(d) {.SIGMA. I?2212!+.SIGMA. I?(Bi, Ca) O!}/.SIGMA. I?T! >88.8%where .
    Type: Grant
    Filed: April 1, 1996
    Date of Patent: January 26, 1999
    Assignees: Osaka Gas Co., Ltd., International Superconductivity Technology Center, Mitsubishi Denki KK
    Inventors: Shuzo Kudo, Hisao Ohnishi, Masamichi Ipponmatsu, Shoji Tanaka, Hisao Yamauchi, Satoshi Takano, Mitsunobu Wakata
  • Patent number: 5810984
    Abstract: A nitrogen oxide sensor and a method of manufacturing the sensor are disclosed. The sensor has a gas detecting portion including sensitive material having electric property thereof subject to change in association with presence of nitrogen oxide in gas and a pair of electrodes electrically connected with the gas detecting portion. The gas detecting portion includes, as a main component thereof, metal oxide compound represented by a general formula:Bi.sub.2 Sr.sub.2 (Ca.sub.1-x Y.sub.x)Cu.sub.2 O.sub.8+y(0.8.ltoreq.x.ltoreq.1; 0.ltoreq.y.ltoreq.1)and having the 2212 phase crystal structure and crystalline size greater than 100 .ANG..
    Type: Grant
    Filed: April 22, 1997
    Date of Patent: September 22, 1998
    Assignee: Osaka Gas Co., Ltd.
    Inventors: Shuzo Kudo, Hisao Ohnishi, Hisashi Sakai
  • Patent number: 5734091
    Abstract: A method of manufacturing a nitrogen oxide sensor for detecting a nitrogen oxide to be used in the field of e.g. reducing or decomposing nitrogen oxides, as well as such sensor and material suitable for manufacturing the sensor are disclosed. For manufacturing the sensor material, a precursor containing components for constituting the sensor material in a predetermined equivalent ratio of stoichiometry between chemical elements is prepared. First, the precurser is subjected to sintered to a preliminary sintering step. Then, the resultant sintered material is subjected to at least two cycles of main sintering step at 815.degree. to 848.degree. C. (T1) with an intermediate grinding step of the sintered material therebetween, thus obtaining the gas detecting portion comprised mainly of oxide compound having a composition represented by:Bi.sub.2 Sr.sub.2 YCu.sub.2 O.sub.8+y(0.ltoreq.y.ltoreq.1)and having the 2212 phase of crystal structure.
    Type: Grant
    Filed: February 21, 1997
    Date of Patent: March 31, 1998
    Assignee: Osaka Gas Co., Ltd.
    Inventors: Shuzo Kudo, Hisao Ohnishi, Hisashi Sakai