Abstract: A chemical transport process which is enhanced by a plasma formed in a substantially oxygen free hydrogen environment for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 .mu.m/hr. The process, performed at 80 to 180 Torr and a current density of about 1 amp/cm.sup.2 of substrate, can be scaled to deposit films on large areas. The invention further comprises doped diamond films produced by the process, said product having a well-faceted microcrystalline structure with x-ray diffraction pattern and Raman spectra indicative of a predominately diamond structure. The doped diamond films can function as n-type and p-type semiconductors.

Abstract: A process and system for producing fullerenes by sputtering. A carbon target is sputtered to form a vapor of sputtered carbon atoms. The sputtered carbon atoms are quenched in an atmosphere of inert gas and deposited onto a collection substrate. The resulting carbon soot is extracted to recover fullerenes. The process produces carbon soot which is rich in C.sub.70 and higher fullerenes.

Abstract: A process and system for producing fullerenes by electron beam evaporation of a carbon target in a vacuum. A carbon target is evaporated by an electron beam in a vacuum to form a flux of carbon atoms or clusters. The evaporated carbon atoms or clusters are deposited onto collection substrates which are electrically charged and heated or neutral and chilled. The resulting carbon soot is extracted to recover fullerenes. The process produces carbon soot which is rich in C.sub.70 and higher fullerenes.