Abstract: A semiconductor package includes: a substrate; a first dielectric layer over the substrate; a first bond pad and a second bond pad over the first dielectric layer, the first bond pad having a first sidewall facing the second bond pad; a second dielectric layer over the first and the second bond pads; and an opening through the second dielectric layer and extending from the first bond pad to the second bond pad, the opening including a first area over and exposing the first bond pad, where in a top view, the opening exposes a first segment of the first sidewall disposed between a first edge and a second edge of the first area that intersect the first sidewall, where the first segment of the first sidewall is between a second segment and a third segment of the first sidewall, the second segment being covered by the second dielectric layer.

Abstract: A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

Abstract: A semiconductor package includes: a substrate; a first dielectric layer over the substrate; a first bond pad and a second bond pad over the first dielectric layer, the first bond pad having a first sidewall facing the second bond pad; a second dielectric layer over the first and the second bond pads; and an opening through the second dielectric layer and extending from the first bond pad to the second bond pad, the opening including a first area over and exposing the first bond pad, where in a top view, the opening exposes a first segment of the first sidewall disposed between a first edge and a second edge of the first area that intersect the first sidewall, where the first segment of the first sidewall is between a second segment and a third segment of the first sidewall, the second segment being covered by the second dielectric layer.

Abstract: A semiconductor package includes: a substrate; a first dielectric layer over the substrate; a first bond pad and a second bond pad over the first dielectric layer, the first bond pad having a first sidewall facing the second bond pad; a second dielectric layer over the first and the second bond pads; and an opening through the second dielectric layer and extending from the first bond pad to the second bond pad, the opening including a first area over and exposing the first bond pad, where in a top view, the opening exposes a first segment of the first sidewall disposed between a first edge and a second edge of the first area that intersect the first sidewall, where the first segment of the first sidewall is between a second segment and a third segment of the first sidewall, the second segment being covered by the second dielectric layer.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate and a semiconductor die over the substrate. The chip package also includes a lid covering a top surface of the semiconductor die. The lid has a first support structure and a second support structure, and the first support structure and the second support structure are positioned at respective corner portions of the substrate. An opening penetrates through the lid to expose a space containing the semiconductor die, and the lid has a side edge extending from an edge of the first support structure to an edge of the second support structure.

Abstract: A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate and a semiconductor die over the substrate. The chip package also includes a lid covering a top surface of the semiconductor die. The lid has multiple support structures, and the support structures are positioned at respective corner portions of the substrate. Multiple openings penetrate through the lid to expose a space containing the semiconductor die.

Abstract: A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate and a semiconductor die over the substrate. The chip package also includes a lid covering a top surface of the semiconductor die. The lid has multiple support structures, and the support structures are positioned at respective corner portions of the substrate. Multiple openings penetrate through the lid to expose a space containing the semiconductor die.

Abstract: A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate and a semiconductor die over a surface of the substrate. The chip package also includes a lid over the semiconductor die. The lid has a number of support structures bonded with the substrate, and the lid has one or more openings between two of the support structures.

Abstract: A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

Abstract: An embodiment package includes a first package; a thermal interface material (TIM) contacting a top surface of the first package, and a second package bonded to the first package. The second package includes a first semiconductor die, and the TIM contacts a bottom surface of the first semiconductor die. The package further includes a heat spreader disposed on an opposing surface of the second package as the first package.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a first package structure including a first semiconductor die that has a first side and a second side opposite thereto. The chip package also includes a package layer partially or completely encapsulating the first semiconductor die, and a conductive feature in the package layer. The chip package further includes a first heat-spreading layer over the first side of the first semiconductor die and a first cap layer on the first heat-spreading layer.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a first package structure including a first semiconductor die that has a first side and a second side opposite thereto. The chip package also includes a package layer partially or completely encapsulating the first semiconductor die, and a conductive feature in the package layer. The chip package further includes a first heat-spreading layer over the first side of the first semiconductor die and a first cap layer on the first heat-spreading layer.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a substrate and a semiconductor die over a surface of the substrate. The chip package also includes a lid over the semiconductor die. The lid has a number of support structures bonded with the substrate, and the lid has one or more openings between two of the support structures.

Abstract: A semiconductor package includes a cover, a substrate, at least one semiconductor device and at least one corner stiffener. The cover has at least one corner portion. The substrate is in force communication with the cover. The substrate has at least one corner portion. The semiconductor device is present between the cover and the substrate. The corner stiffener is present on at least one of the corner portion of the cover and the corner portion of the substrate.

Abstract: A device includes a substrate with a die over the substrate. A molding compound surrounds the die and includes a structural interface formed along a peripheral region of the molding compound.

Abstract: A three dimensional integrated circuit (3DIC) includes a first substrate and a heat spreading structure embedded in the first substrate. The 3DIC further includes a die electrically connected to the first substrate, wherein the die is thermally connected to the heat spreading structure. The 3DIC further includes a plurality of memory units on the die, wherein the die is between the plurality of memory units and the first substrate, and the plurality of memory units is thermally connected to the heat spreading structure by the die. The 3DIC further includes an external cooling unit on the plurality of memory units, wherein the plurality of memory units is between the die and the external cooling unit, and the die is thermally connected to the external cooling unit by the plurality of memory units.

Abstract: An embodiment package includes a first package; a thermal interface material (TIM) contacting a top surface of the first package, and a second package bonded to the first package. The second package includes a first semiconductor die, and the TIM contacts a bottom surface of the first semiconductor die. The package further includes a heat spreader disposed on an opposing surface of the second package as the first package.