Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Abstract: A coating apparatus for forming a coating film over a substrate includes a spin chuck for holding and rotating the substrate, a central coating nozzle over a central portion of the substrate, a plurality of first coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same first distance, and a plurality of second coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same second distance, wherein the second distance is greater than the first distance.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: A coating apparatus for forming a coating film over a substrate includes a spin chuck for holding and rotating the substrate, a central coating nozzle over a central portion of the substrate, a plurality of first coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same first distance, and a plurality of second coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same second distance, wherein the second distance is greater than the first distance.

Abstract: An apparatus comprises a first gas inlet coupled between a first pipe and a reaction chamber, wherein the first pipe configured to carry process gases, a second gas inlet coupled between a second pipe and the reaction chamber, wherein the second pipe configured to carry a precursor material in a gaseous state and a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material.

Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Abstract: An apparatus includes a body and a surface for receiving a semiconductor wafer carrier is provided. A nozzle and a venting hole are provided on the surface. The semiconductor wafer carrier has at least one selectively closable capped opening at a bottom, top and/or side surface thereof. The capped opening is configured to couple to, and be accessible by, the nozzle and receive gas output from the nozzle so as to create a substantially oxygen free environment within the semiconductor wafer carrier. The vent hole is configured to allow gas to flow out of the semiconductor wafer carrier. In addition, the apparatus includes a sensor and a controller. The sensor is configured to monitor an ambient condition in the semiconductor wafer carrier, and the controller is configured to adjust a control valve based on the ambient condition so as to control the gas flow or output from the nozzle.

Abstract: A method of forming a coating film over a substrate is provided. The method includes spinning the substrate. The method further includes providing a central coating liquid spray over a central portion of the substrate. The method also includes providing first coating liquid sprays over the substrate. The first coating liquid sprays surround the central coating liquid spray and are spaced apart from the central coating liquid spray by a same first distance.

Abstract: A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Abstract: A production tool includes a chamber, a heater in the chamber, and a pumping outlet on a side of the heater. A pumping liner is in the chamber and encircling the heater. The pumping liner and the heater have a first gap therebetween and a second gap therebetween. The second gap is different from the first gap, and the second gap is farther away from the first pumping outlet than the first gap.

Abstract: A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.

Abstract: A method of forming a coating film over a substrate is provided. The method includes spinning the substrate. The method further includes providing a central coating liquid spray over a central portion of the substrate. The method also includes providing first coating liquid sprays over the substrate. The first coating liquid sprays surround the central coating liquid spray and are spaced apart from the central coating liquid spray by a same first distance.

Abstract: An apparatus includes a body and a surface for receiving a semiconductor wafer carrier is provided. A nozzle and a venting hole are provided on the surface. The semiconductor wafer carrier has at least one selectively closable capped opening at a bottom, top and/or side surface thereof. The capped opening is configured to couple to, and be accessible by, the nozzle and receive gas output from the nozzle so as to create a substantially oxygen free environment within the semiconductor wafer carrier. The vent hole is configured to allow gas to flow out of the semiconductor wafer carrier. In addition, the apparatus includes a sensor and a controller. The sensor is configured to monitor an ambient condition in the semiconductor wafer carrier, and the controller is configured to adjust a control valve based on the ambient condition so as to control the gas flow or output from the nozzle.

Abstract: A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.

Abstract: An apparatus comprises a first gas inlet coupled between a first pipe and a reaction chamber, wherein the first pipe configured to carry process gases, a second gas inlet coupled between a second pipe and the reaction chamber, wherein the second pipe configured to carry a precursor material in a gaseous state and a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material.

Abstract: A production tool includes a chamber, a heater in the chamber, and a pumping outlet on a side of the heater. A pumping liner is in the chamber and encircling the heater. The pumping liner and the heater have a first gap therebetween and a second gap therebetween. The second gap is different from the first gap, and the second gap is farther away from the first pumping outlet than the first gap.