Abstract: A method of fabricating a radiation emitter including fabricating a layer stack that includes a first reflector, at least one intermediate layer, an active region and a second reflector; locally oxidizing the intermediate layer and thereby forming at least one unoxidized aperture; and locally removing the layer stack, and thereby forming a mesa that includes the first reflector, the unoxidized aperture, the active region, and the second reflector. Before or after locally removing the layer stack and forming the mesa: forming at least a first unoxidized aperture and at least a second unoxidized aperture inside the intermediate layer; etching a trench inside the layer stack, the trench defining a first portion and a second portion of the mesa, wherein the trench severs the intermediate layer(s) so that the first aperture is located in the first portion and the second aperture is located in the second portion of the mesa.

Abstract: A semiconductor disk chip includes a cap layer having at least one structured region for mode selection, a periodic gain structure, a Distributed Bragg reflector, and a substrate. The structured region is structured in such a way that a lateral fundamental mode of the laser radiation experiences lower losses than radiation of higher laser modes and includes at least one trench extending into the cap layer to a depth not greater than a thickness of the cap layer, and wherein the depth decreases from an outer region of an emission surface of the semiconductor chip in a direction of an inner of the emission surface of the semiconductor chip.

Abstract: An exemplary embodiment of the invention relates to a method of fabricating a radiation emitter (100) comprising the steps of fabricating a layer stack (10) that comprises a first reflector (12), an active region (13), an oxidizable layer (21-24), and a second reflector (14); and locally removing the layer stack (10), and thereby forming a mesa (M) of the radiation emitter (100), wherein said mesa (M) comprises the first reflector (12), the active region (13), the oxidizable layer (21-24) and the second reflector (14), wherein before or after locally removing the layer stack (10) and forming said mesa (M) the following steps are carried out: vertically etching blind holes (30) inside the layer stack (10), wherein the blind holes (30) vertically extend at least to the oxidizable layer (21-24) and expose the oxidizable layer (21-24); and oxidizing the oxidizable layer (21-24) via the sidewalls (31) of the blind holes (30) in lateral direction, wherein from each hole an oxidation front (32) radially moves outwar

Abstract: A method of fabricating at least one radiation emitter including fabricating a layer stack that includes a first reflector, an active region, an oxidizable layer, and a second reflector; and locally removing the layer stack, and thereby forming at least one mesa. The mesa includes the first reflector, the active region, the oxidizable layer and the second reflector. Before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching at least three blind holes inside the layer stack, wherein the blind holes vertically extend to and expose the oxidizable layer; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction. An oxidation front radially moves outwards from each hole. The etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts.

Abstract: A method of fabricating a radiation emitter including fabricating a layer stack that includes a first reflector, at least one intermediate layer, an active region and a second reflector; locally oxidizing the intermediate layer and thereby forming at least one unoxidized aperture; and locally removing the layer stack, and thereby forming a mesa that includes the first reflector, the unoxidized aperture, the active region, and the second reflector. Before or after locally removing the layer stack and forming the mesa: forming at least a first unoxidized aperture and at least a second unoxidized aperture inside the intermediate layer; etching a trench inside the layer stack, the trench defining a first portion and a second portion of the mesa, wherein the trench severs the intermediate layer(s) so that the first aperture is located in the first portion and the second aperture is located in the second portion of the mesa.

Abstract: A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

Abstract: A laser beam combining system, including at least one beam combining unit. The beam combining unit includes reflective device, polarization conversion element and beam combining device. The reflective device includes two reflective surfaces configured to divide a high-polarization laser into a first beam and a second beam. The first beam is incident on the beam combining device. The polarization conversion element is provided on a propagation path of the second beam to convert the second beam into a light having a polarization direction perpendicular to an original polarization direction of the second beam. The converted light is guided to the beam combining device which is configured to combine the first beam and the converted light into one beam for outputting.

Abstract: A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

Abstract: A laser beam combining system, including at least one beam combining unit. The beam combining unit includes reflective device, polarization conversion element and beam combining device. The reflective device includes two reflective surfaces configured to divide a high-polarization laser into a first beam and a second beam. The first beam is incident on the beam combining device. The polarization conversion element is provided on a propagation path of the second beam to convert the second beam into a light having a polarization direction perpendicular to an original polarization direction of the second beam. The converted light is guided to the beam combining device which is configured to combine the first beam and the converted light into one beam for outputting.

Abstract: The present invention provides a spectral beam combined laser system comprising an optical gain element array, a transform element, a diffraction element and a reflecting element, which are sequentially positioned in an optical path, wherein said optical gain element array comprises a plurality of gain elements radiate laser beams having different wavelength; said transform element focuses and spatially overlaps the laser beams received from said optical gain element array at said diffraction element; said diffraction element diffracts the laser beams spatially overlapped by the transform element to the reflecting element; and said reflecting element feeds back a portion of the laser beams to the optical gain element array in a V-shaped off-axis external cavity with off-axis angle, wherein said V-shaped off-axis external cavity is formed between the reflecting element and the optical gain element array.

Abstract: The present invention provides a spectral beam combined laser system comprising an optical gain element array, a transform element, a diffraction element and a reflecting element, which are sequentially positioned in an optical path, wherein said optical gain element array comprises a plurality of gain elements radiate laser beams having different wavelength; said transform element focuses and spatially overlaps the laser beams received from said optical gain element array at said diffraction element; said diffraction element diffracts the laser beams spatially overlapped by the transform element to the reflecting element; and said reflecting element feeds back a portion of the laser beams to the optical gain element array in a V-shaped off-axis external cavity with off-axis angle, wherein said V-shaped off-axis external cavity is formed between the reflecting element and the optical gain element array.