Abstract: A method is described for producing semiconductor films, particularly monocrystalline silicon and germanium films, characterized by the steps of: epitaxially growing on a substrate, such as silicon or sapphire, a layer of dissolvable material, such as sodium fluoride, sodium chloride, or silver; epitaxially growing on the dissolvable layer a layer of the semiconductor; and dissolving the dissolvable layer, thereby separating the semiconductor from the substrate. The substrate may thus be reused as a matrix for growing many such films. Also a plurality of semiconductor layers may be epitaxially grown on a common substrate each separated by a dissolvable layer, all the latter layers being dissolved at one time to produce a plurality of the semiconductor films.