Patents by Inventor Sigeyasu Kouzuchi

Sigeyasu Kouzuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate turn-off thyristor
    Patent number: 5554863
    Abstract: A gate turn-off thyristor including: an n-type emitter semiconductor layer divided into a plurality of n-type areas; a p-type base semiconductor layer which cooperates with the n-type emitter semiconductor layer to form a first main circular surface; an n-type base semiconductor layer; and a p-type emitter semiconductor layer cooperating with the n-type base semiconductor layer to form a second main circular surface. An outer diameter of the p-type emitter semiconductor layer is smaller than that of the n-type emitter semiconductor layer. A first main electrode put in low resistance contact with the n-type emitter semiconductor layer is formed on the first main surface. A second main electrode put in low resistance contact with the p-type emitter layer and the n-type base semiconductor layer is formed on the second main surface. A control electrode is formed in the p-type base semiconductor on the first main surface.
    Type: Grant
    Filed: June 15, 1994
    Date of Patent: September 10, 1996
    Assignees: Hitachi, Ltd., Hitachi Haramachi Electronics Co., Ltd.
    Inventors: Sigeyasu Kouzuchi, Shuroku Sakurada, Takashi Saitoh, Hitoshi Komuro