Patents by Inventor Sigfredo Emanuel Gonzalez Diaz

Sigfredo Emanuel Gonzalez Diaz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10892756
    Abstract: A DPI circuit reduces noise effects in an ESD circuit when coupled between an ESD circuit and a protected pin. The DPI circuit includes an NMOS transistor coupled between an output node and a lower rail and a charge pump coupled between the input node and the gate of the first NMOS transistor. A resistor is coupled between the gate of the first NMOS transistor and the lower rail.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: January 12, 2021
    Assignee: Texas Instruments Incorporated
    Inventors: Benjamin Lee Arney, Sigfredo Emanuel González Díaz
  • Publication number: 20190199351
    Abstract: A DPI circuit reduces noise effects in an ESD circuit when coupled between an ESD circuit and a protected pin. The DPI circuit includes an NMOS transistor coupled between an output node and a lower rail and a charge pump coupled between the input node and the gate of the first NMOS transistor. A resistor is coupled between the gate of the first NMOS transistor and the lower rail.
    Type: Application
    Filed: December 26, 2017
    Publication date: June 27, 2019
    Inventors: Benjamin Lee Amey, Sigfredo Emanuel Gonzalez Diaz
  • Patent number: 8975948
    Abstract: A transmission gate self-biases its transistors to provide a constant gate biasing that provides a consistent path for an input signal to be cleanly passed to the gate's output and protects the transistors' gate oxide in cases of high input signals. An array of matched transistors are arranged to be biased by a voltage input node and with a current source configured to provide a bias current across individual transistors of the array of matched transistors. A current sink is configured to sink the bias current across the individual transistors to set a bias voltage at a voltage input node to a multiple of a gate-to-source voltage for the individual transistors of the array of matched transistors. A different set of transistors is configured to provide a signal path for an analog input signal.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: March 10, 2015
    Assignee: Texas Instruments Incorporated
    Inventor: Sigfredo Emanuel Gonzalez Diaz
  • Publication number: 20140132331
    Abstract: A transmission gate self-biases its transistors to provide a constant gate biasing that provides a consistent path for an input signal to be cleanly passed to the gate's output and protects the transistors' gate oxide in cases of high input signals. An array of matched transistors are arranged to be biased by a voltage input node and with a current source configured to provide a bias current across individual transistors of the array of matched transistors. A current sink is configured to sink the bias current across the individual transistors to set a bias voltage at a voltage input node to a multiple of a gate-to-source voltage for the individual transistors of the array of matched transistors. A different set of transistors is configured to provide a signal path for an analog input signal.
    Type: Application
    Filed: November 15, 2012
    Publication date: May 15, 2014
    Applicant: Texas Instruments Incorporated
    Inventor: Sigfredo Emanuel Gonzalez Diaz