Abstract: A light emitting diode includes a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure has a first surface and a second surface. The semiconductor structure includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer that includes a P-type contact layer, and a P-type base layer located between the P-type contact layer and the active layer. The active layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The first electrode is located on the second surface of the semiconductor structure, and is electrically connected to the N-type semiconductor layer. The second electrode is located on the second surface of the semiconductor structure, and is electrically connected to the P-type semiconductor layer. A P-type dopant concentration in the P-type contact layer gradually decreases along a direction from the first surface towards the second surface.

Abstract: A light-emitting device includes a semiconductor laminate, a first contact electrode, and a second contact electrode. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer being laminated in a thickness direction. The semiconductor laminate has a first portion having a patterned structure that has a first surface constituted by the first semiconductor layer, a second surface opposite to the first surface and away from the first semiconductor layer, and a side surface interconnecting the first surface and the second surface, and a second portion being a light-emitting area. The first contact electrode is formed on the first portion, electrically connected to the first semiconductor layer and in contact with the first surface, the second surface and the side surface of the patterned structure. The second contact electrode is formed on the second portion and electrically connected to the second semiconductor layer.

Abstract: According to the disclosure, the light emitting device includes a substrate, a semiconductor structure, a first electrode unit, a second electrode unit, a plurality of micro elements. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor structure located on top of the first surface of the substrate, and has a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked sequentially. The first electrode unit is electrically connected to the first semiconductor layer. The second electrode unit is electrically connected to the second semiconductor layer. The plurality of micro elements are located on the second surface of the substrate. Each of the micro elements has a base that is protrusion that has a base diameter ranging from 400 nm to 1000 nm.

Abstract: The disclosure provides an ultraviolet light emitting diode including an epitaxial structure, a first contact electrode, a second contact electrode, a first connecting electrode, and a first insulating structure. The epitaxial structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked in sequence. The first contact electrode is disposed on the epitaxial structure and electrically connected to the first semiconductor layer. The second contact electrode is disposed on the epitaxial structure and electrically connected to the second semiconductor layer. The first connecting electrode is disposed on the first contact electrode. The first insulating structure is disposed on the first connecting electrode and the second contact electrode. The epitaxial structure has multiple conductive holes penetrating from the second semiconductor layer down to the first semiconductor layer.

Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.

Abstract: A light-emitting device includes an epitaxial light-emitting structure formed on a substrate, a first electrode and a second electrode. The epitaxial light-emitting structure sequentially includes: a first type semiconductor layer including an Al component and electrically connected to the first electrode; an active layer; a second type semiconductor layer electrically connected to the second electrode; a first recess extending from the second type semiconductor layer to the first type semiconductor layer and having a projected area on the substrate ranging from 20% to 70% of that of the epitaxial light-emitting structure; and a second recess extending from the first type semiconductor layer toward the substrate. A light-emitting apparatus is also disclosed.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A flip-chip light-emitting diode includes an epitaxial structure including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order. The epitaxial structure is formed with first holes and second holes respectively at a first region and a second region that are independent from each other. Each of the first and second holes extends through the second semiconductor layer and the active layer, and partially exposes the first semiconductor layer. A surface of the first semiconductor layer exposed by the first holes has a total area smaller than a total area of a surface of the first semiconductor layer exposed by the second holes.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure, and an electrode structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The electrode structure includes electrodes that are respectively disposed on the first and second semiconductor layers opposite to the substrate. Each electrode has an upper surface that is opposite to the first and second semiconductor layers. The electrode structure also includes an insulating unit that is disposed in each electrode, and that is not exposed from the upper surface of the corresponding electrode.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.