Abstract: A crack-resistant fabrication method and fabrication apparatus for a semiconductor package prevents interface isolation and cracks by coating a semiconductor chip disposed in a semiconductor package, a paddle of a lead frame, bonding wires and a bond paste using a polyimide type coating material. The coating material forms a coating film to act as a buffering member. The fabrication method can include the steps of attaching a semiconductor chip on a paddle, electrically coupling the semiconductor chip and leads, forming a coating film on the surfaces of the semiconductor chip and the leads, and molding the semiconductor chip, the leads, and the coating film.

Abstract: An improved transfer molding apparatus has a laminated chase block with many sets, which is capable of fabricating a plurality of semiconductor packages. The apparatus includes an upper plate and a movable lower plate and a plurality of posts disposed between the upper and lower plates. A plurality of laminated chase blocks is fixed to the posts. A plurality of ejecting means are disposed at one side of the chase blocks and supply means concurrently supplies a molding compound to the plurality of chase blocks.

Abstract: A charge coupled device (CCD) semiconductor chip package includes a body having a hole formed in the center thereof and a projection extending inwardly from the inner wall of the body. A plurality of outleads are embedded in the projection, and a plate is attached to the upper surface of the projection. A glass lid is attached to the upper surface of the body for covering the upper portion of the hole. A chip has a light receiving area and a plurality of solder balls, and a bottom cover fills the lower portion of the hole and supports the chip. The CCD package chip employs a direct connection technique of outleads to solder balls formed on chip pads, instead of a wire bonding process, which demands a high temperature environment. By using a price competitive plastic body, material cost is reduced compared to a costly material, such as a ceramic body, when fabricating a semiconductor package. Further, package reliability is enhanced.

Abstract: A semiconductor package lead deflash method comprises the steps of forming a plating thin film on a plurality of leads, weakening an adhesive force of the plating thin film, and removing a flash and the plating thin film formed therebeneath respectively from the plurality of leads. The lead deflash method enables complete elimination of the lead flash formed during a package fabrication, and additionally serves as a pollution deterrent by adopting a chemical-free deflash method.