Abstract: A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.

Abstract: The invention describes a gas laser comprising a container (6) intended to receive a gas or a gas mixture as laser-active medium, the container (6) having an axis (14) along which the gas laser emits its laser radiation, and comprising further means for generating a plasma in the container (6) and means for generating a magnetic field in the container (6). It is provided according to the invention that a group of at least two pairs of magnet poles is arranged, with the poles (1, 2) extending at a distance from, and along the axis (14) and being arranged around the axis (14) with alternating polarity so that the magnetic field emanating from them exhibits an intensity sink in the region of the axis (14), and that the means for generating the plasma include a source for an electromagnetic alternating field, which is associated to the container (6).