Abstract: A method and system for cleaning a reticle. There is provided a clean chamber and a reticle having a pair of opposing edges and a pair of opposing surfaces which is to be cleaned disposed in the clean chamber. A gas inert to the reticle is directed in a direction tangential to each of the surfaces of the reticle and along one the edge of the reticle. The gas is exhausted from a location spaced from the other of the pair of opposing edges and remote form the one edge. An optional monitor monitors the particles in the exhausted gas. The gas is preferably applied in pulses which have a pulse length of from about 0.05 second to about 1 second and a pulse repetition rate of from about 0.5/second to about 40/second. The gas is preferably ionized and preferably is applied at a pressure of from about 20 psi to about 120 psi. The stepper chamber is vibrationally isolated from the blow-off chamber.

Abstract: A system for cleaning a reticle. There is provided a clean chamber and a reticle having a pair of opposing edges and a pair of opposing surfaces which is to be cleaned disposed in the clean chamber. A gas inert to the reticle is directed in a direction tangential to each of the surfaces of the reticle and along one the edge of the reticle. The gas is exhausted from a location spaced from the other of the pair of opposing edges and remote form the one edge. An optional monitor monitors the particles in the exhausted gas. The gas is preferably applied in pulses which have a pulse length of from about 0.05 second to about 1 second and a pulse repetition rate of from about 0.5/second to about 40/second. The gas is preferably ionized and preferably is applied at a pressure of from about 20 psi to about 120 psi. The stepper chamber is vibrationally isolated from the blow-off chamber.

Abstract: A method of processing wafers containing a gate oxide assembly (10) is disclosed that reduces gate oxide damage during wafer production due to damage caused by charging. The method comprises creating an oxide gate assembly (10) on a silicon layer (11) in a production line chamber followed by the deposition of a polysilicon layer (22). Following the creation of the gate oxide assembly (10) a pressure of at least 1.2 Torr is maintained while lowering the power within the production line chamber. The invention can be used with a gate oxide layer (16) of less than 1000 angstroms.

Abstract: A method of processing wafers containing a gate oxide assembly (10) is disclosed that reduces gate oxide damage during wafer production due to damage caused by charging. The method comprises creating an oxide gate assembly (10) on a silicon layer (11) in a production line chamber followed by the deposition of a polysilicon layer (22). Following the creation of the gate oxide assembly (10) a pressure of at least 1.2 Torr is maintained while lowering the power within the production line chamber. The invention can be used with a gate oxide layer (16) of less than 1000 angstroms.

Abstract: A system (10, 110, 210) for detecting particles (144) on a surface of a substrate-supporting chuck (14, 114, 214) including an inspection subsystem (128, 130, 131, 116, 250, 252, 222, 216) for analyzing the surface of the chuck (14, 114, 214) to determine if any particles (144) are thereon, a movable table (16, 116, 216) for holding the chuck (14, 114, 214) to inspect it and for moving the chuck (14, 114, 214) during inspection, and a control unit (22, 122, 222) for moving the movable table (16, 116, 216) relative to the inspection subsystem (128, 130, 131, 116, 250, 252, 222, 216) to inspect the surface of the chuck (14, 114, 214) and to produce an indication signal if a particle (144) is detected on the surface of the chuck (14, 114, 214).