Patents by Inventor Simon Guillaumet

Simon Guillaumet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OPTICAL DIFFUSER
    Publication number: 20230068198
    Abstract: The present description concerns an optical diffuser including a first layer having an electrically-conductive track formed therein, and a second layer, having the first layer resting thereon resting thereon, and having at least two electrically-conductive pillars extending across the entire thickness of the second layer formed therein. The second layer includes at least one first region located under the conductive track comprising no pillar.
    Type: Application
    Filed: August 17, 2022
    Publication date: March 2, 2023
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Simon Guillaumet, Benjamin Vianne, Stephane Zoll
  • Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production
    Patent number: 8610048
    Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: December 17, 2013
    Assignee: STMicroelectronics S.A.
    Inventors: Jerome Alieu, Simon Guillaumet, Christophe Legendre, Hughes Leininger, Jean-Pierre Oddou, Marc Vincent
  • PHOTOSENSITIVE INTEGRATED CIRCUIT EQUIPPED WITH A REFLECTIVE LAYER AND CORRESPONDING METHOD OF PRODUCTION
    Publication number: 20120006980
    Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.
    Type: Application
    Filed: September 22, 2011
    Publication date: January 12, 2012
    Applicant: STMICROELECTRONICS S.A.
    Inventors: JÉRÔME ALIEU, SIMON GUILLAUMET, CHRISTOPHE LEGENDRE, HUGHES LEININGER, JEAN-PIERRE ODDOU, MARC VINCENT
  • Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production
    Patent number: 8044443
    Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: October 25, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Jérôme Alieu, Simon Guillaumet, Christophe Legendre, Hugues Leininger, Jean-Pierre Oddou, Marc Vincent
  • Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production
    Publication number: 20070138470
    Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.
    Type: Application
    Filed: November 21, 2006
    Publication date: June 21, 2007
    Inventors: Jerome Alieu, Simon Guillaumet, Christophe Legendre, Hugues Leininger, Jean-Pierre Oddou, Marc Vincent