Abstract: Solar cell module (2000) with a first solar cell string (2121, . . . , 2124), wherein the first solar cell string (2121, . . . , 2124) has at least two solar cells (2121, . . . , 2124) connected in series and arranged in two rows, with a first bypass element (2151) which is connected in parallel with the first solar cell string (2121, . . . , 2124), with a second solar cell string (2221, . . . , 2224) wherein the second solar cell string (2221, . . . , 2224) has at least two solar cells (2221, . . . , 2224) connected in series and arranged in two rows, with a second bypass element (2251) which is connected in parallel to the second solar cell string (2221, . . . , 2224), with a front side encapsulation layer (2002) and a rear side encapsulation layer (2003), wherein the solar cells (2121, . . . , 2124, 2221, . . . , 2224) of the first solar cell string (2121, . . . , 2124) and the second solar cell string (2221, . . .

Abstract: A method of method for annealing a thin film solar cell device is described. The method includes vacuum annealing an as-deposited photovoltaic cell stack composed of a first electrode, a p-i-n junction having at least one p-doped layer, at least one n-doped layer, and at least one intrinsic layer disposed there between, and a second electrode. The vacuum annealing is performed in a non-plasma, vacuum environment by elevating a temperature of the photovoltaic cell stack to an anneal temperature within the range of between 150 degrees C. and 250 degrees C.