Abstract: Systems, methods and apparatus for wireless charging are disclosed. A wireless charging device has a plurality of planar power transmitting coils, a driver circuit and at least one substrate having channels formed therein. The channels can receive a flow of air at a port of entry and conduct the flow of air through the substrate to a port of exit. The planar power transmitting coils may be supported by at least one substrate. Each planar power transmitting coil may be formed as a spiral winding surrounding a power transfer area. The driver circuit may be configured to provide a charging current to one or more of the planar power transmitting coils when a chargeable device is placed on or near the wireless charging device. The one or more channels may be configured to conduct the flow of air past or through the planar power transmitting coils and the driver circuit.

Abstract: Systems, methods and apparatus for wireless charging are disclosed. A wireless charging device has a plurality of planar power transmitting coils, a coil substrate and a driver circuit. Each planar power transmitting coil may be formed as a spiral winding surrounding a power transfer area. In one example, each planar power transmitting coil is formed by spiral winding a multi-strand wire, each strand in the multistrand wire being electrically insulated from each other strand in the multi-strand wire. The coil substrate may have a plurality of cutouts formed therein. The plurality of cutouts may be configured to secure the planar power transmitting coils in a preconfigured three-dimensional arrangement. The driver circuit may be configured to provide a charging current to one or more of the planar power transmitting coils when a chargeable device is placed on or near the wireless charging device.

Abstract: A microelectronic assembly may include a microelectronic element having a surface and a plurality of contacts at the surface; a first element consisting essentially of at least one of semiconductor or dielectric material, the first element having a surface facing the surface of the microelectronic element and a plurality of first element contacts at the surface of the first element; electrically conductive masses each joining a contact of the plurality of contacts of the microelectronic element with a respective first element contact of the plurality of first element contacts; a thermally and electrically conductive material layer between the surface of the microelectronic element and the surface of the first element and adjacent conductive masses of the conductive masses; and an electrically insulating coating electrically insulating the conductive masses and the surfaces of the microelectronic element and the first element from the thermally and electrically conductive material layer

Abstract: Methods are disclosed for improving electrical interconnection in stacked die assemblies, and stacked die assemblies are disclosed having structural features formed by the methods. The resulting stacked die assemblies are characterized by having reduced electrical interconnect failure.

Abstract: A microelectronic package includes a subassembly, a second substrate, and a monolithic encapsulant. The subassembly includes a first substrate that has at least one aperture, a coefficient of thermal expansion (CTE) of eight parts per million per degree Celsius or less, and first and second contacts arranged so as to have a pitch of 200 microns or less. First and second microelectronic elements are respectively electrically connected to the first and second contacts. Wire bonds may be used to connect the second element contacts with the second contacts. A second substrate may underlie either the first or the second microelectronic elements and be electrically interconnected with the first substrate. The second substrate may have terminals configured for electrical connection to a component external to the microelectronic package. A monolithic encapsulant may contact the first and second microelectronic elements and the first and second substrates.

Abstract: A microelectronic assembly may include a microelectronic element having a surface and a plurality of contacts at the surface; a first element consisting essentially of at least one of semiconductor or dielectric material, the first element having a surface facing the surface of the microelectronic element and a plurality of first element contacts at the surface of the first element; electrically conductive masses each joining a contact of the plurality of contacts of the microelectronic element with a respective first element contact of the plurality of first element contacts; a thermally and electrically conductive material layer between the surface of the microelectronic element and the surface of the first element and adjacent conductive masses of the conductive masses; and an electrically insulating coating electrically insulating the conductive masses and the surfaces of the microelectronic element and the first element from the thermally and electrically conductive material layer.

Abstract: A microelectronic assembly may include a microelectronic element having a surface and a plurality of contacts at the surface; a first element consisting essentially of at least one of semiconductor or dielectric material, the first element having a surface facing the surface of the microelectronic element and a plurality of first element contacts at the surface of the first element; electrically conductive masses each joining a contact of the plurality of contacts of the microelectronic element with a respective first element contact of the plurality of first element contacts; a thermally and electrically conductive material layer between the surface of the microelectronic element and the surface of the first element and adjacent conductive masses of the conductive masses; and an electrically insulating coating electrically insulating the conductive masses and the surfaces of the microelectronic element and the first element from the thermally and electrically conductive material layer

Abstract: A microelectronic package includes a subassembly, a second substrate, and a monolithic encapsulant. The subassembly includes a first substrate that has at least one aperture, a coefficient of thermal expansion (CTE) of eight parts per million per degree Celsius or less, and first and second contacts arranged so as to have a pitch of 200 microns or less. First and second microelectronic elements are respectively electrically connected to the first and second contacts. Wire bonds may be used to connect the second element contacts with the second contacts. A second substrate may underlie either the first or the second microelectronic elements and be electrically interconnected with the first substrate. The second substrate may have terminals configured for electrical connection to a component external to the microelectronic package. A monolithic encapsulant may contact the first and second microelectronic elements and the first and second substrates.

Abstract: Methods and apparatus for increasing the yield achieved during high density interconnect (HDI) production. In particular, processes in which panels are tested to identify good cells/parts, good cells are removed from the panels, and new panels created entirely of identified/known good cells allow increases in the number of layers used in a HDI without incurring the decrease in yield normally associated with such a layering process.

Abstract: Methods and apparatus for increasing the yield achieved during high density interconnect (HDI) production. In particular, processes in which panels are tested to identify good cells/parts, good cells are removed from the panels, and new panels created entirely of identified/known good cells allow increases in the number of layers used in a HDI without incurring the decrease in yield normally associated with such a layering process.

Abstract: Methods and apparatus for increasing the yield achieved during high density interconnect (HDI) production. In particular, processes in which panels are tested to identify good cells/parts, good cells are removed from the panels, and new panels created entirely of identified/known good cells allow increases in the number of layers used in a HDI without incurring the decrease in yield normally associated with such a layering process.

Abstract: Methods and apparatus for increasing the yield achieved during high density interconnect (HDI) production. In particular, processes in which panels are tested to identify good cells/parts, good cells are removed from the panels, and new panels created entirely of identified/known good cells allow increases in the number of layers used in a HDI without incurring the decrease in yield normally associated with such a layering process.

Abstract: Methods and apparatus for increasing the yield achieved during high density interconnect (HDI) production. In particular, processes in which panels are tested to identify good cells/parts, good cells are removed from the panels, and new panels created entirely of identified/known good cells allow increases in the number of layers used in a HDI without incurring the decrease in yield normally associated with such a layering process.