Abstract: A photo mask blank structure for transferring a mask to an integrated circuit includes a transparent substrate, which has a surface region. The photo mask structure further includes an opaque film overlying the surface region, a negative photoresist material overlying the opaque film, a stop layer overlying the negative photoresist material, and a positive photoresist material overlying the stop layer. The positive photoresist material includes a first opening pattern, and the stop layer includes a second opening pattern that is associated with the first opening pattern of the positive photoresist material. The negative photoresist material includes a third opening pattern that is associated with the first and second opening patterns. The stop layer provides a separation between the negative photoresist material and the positive photoresist material.

Abstract: An apparatus for patterning objects for the manufacture of semiconductor integrated circuits includes an optical source, multiple fiber cores coupled to the optical source, each of the fiber cores has an input end and an output end, and each of the input ends is coupled to the optical source. The apparatus further includes an array coupled to each of the fiber cores, the array is configured to allow each of the fiber ends to output toward a common plane, an object having a photosensitive material coupled to the common plane, and a pattern that is exposed onto the photosensitive material. The pattern is composed of a number beams corresponding to a number of fiber cores.

Abstract: An apparatus for patterning objects for the manufacture of semiconductor integrated circuits includes an optical source, multiple fiber cores coupled to the optical source, each of the fiber cores has an input end and an output end, and each of the input ends is coupled to the optical source. The apparatus further includes an array coupled to each of the fiber cores, the array is configured to allow each of the fiber ends to output toward a common plane, an object having a photosensitive material coupled to the common plane, and a pattern that is exposed onto the photosensitive material. The pattern is composed of a number beams corresponding to a number of fiber cores.

Abstract: A method for patterning objects, e.g., semiconductor wafer, glass plate, composite, etc. The method includes providing an object, which has an overlying layer of photosensitive material. The method includes selectively applying light through one or more fiber cores from a plurality of fiber cores. Each of the fiber cores has an input end and an output end. Each of the input ends is coupled to the optical source. The plurality of fiber cores is numbered from 1 through N, where N is an integer greater than 1. Each of the output ends is also numbered from 1 through N, which corresponds respectively to each of the plurality of fiber cores numbered from 1 through N. The method exposes the photosensitive material from light emitted selectively through the one or more fiber cores. The one or more fiber cores out(s) light respectively through one or more output ends of the fiber cores. Each of the output ends numbered from 1 through N is associated with a pixel numbered respectively from 1 through N.

Abstract: A photo mask blank structure for transferring a mask to an integrated circuit includes a transparent substrate, which has a surface region. The photo mask structure further includes an opaque film overlying the surface region, a negative photoresist material overlying the opaque film, a stop layer overlying the negative photoresist material, and a positive photoresist material overlying the stop layer. The positive photoresist material includes a first opening pattern, and the stop layer includes a second opening pattern that is associated with the first opening pattern of the positive photoresist material. The negative photoresist material includes a third opening pattern that is associated with the first and second opening patterns. The stop layer provides a separation between the negative photoresist material and the positive photoresist material.

Abstract: A method for manufacturing an integrated circuit devices. The method includes providing a substrate, which includes an opaque film overlying the substrate, an overlying negative photoresist layer, a stop layer overlying the negative photoresist layer, and a positive photoresist layer overlying the stop layer. The method includes patterning the positive resist layer to form one or more window openings in the positive photoresist layer. The method also includes removing the exposed stop layer within the one or more window openings to expose a portion of the negative photoresist layer and patterning the exposed portion of the negative photoresist layer. The method includes developing the exposed portion of the negative photoresist layer and removing exposed portions of the opaque layer to expose an underlying portion of the substrate. The method further includes removing any remaining portions of the negative photoresist layer, stop layer, and positive photoresist layer to provide a patterned mask.

Abstract: A method for manufacturing an integrated circuit devices. The method includes providing a substrate, which includes an opaque film overlying the substrate, an overlying negative photoresist layer, a stop layer overlying the negative photoresist layer, and a positive photoresist layer overlying the stop layer. The method includes patterning the positive resist layer to form one or more window openings in the positive photoresist layer. The method also includes removing the exposed stop layer within the one or more window openings to expose a portion of the negative photoresist layer and patterning the exposed portion of the negative photoresist layer. The method includes developing the exposed portion of the negative photoresist layer and removing exposed portions of the opaque layer to expose an underlying portion of the substrate. The method further includes removing any remaining portions of the negative photoresist layer, stop layer, and positive photoresist layer to provide a patterned mask.

Abstract: A method for patterning objects, e.g., semiconductor wafer, glass plate, composite, etc. The method includes providing an object, which has an overlying layer of photosensitive material. The method includes selectively applying light through one or more fiber cores from a plurality of fiber cores. Each of the fiber cores has an input end and an output end. Each of the input ends is coupled to the optical source. The plurality of fiber cores is numbered from 1 through N, where N is an integer greater than 1. Each of the output ends is also numbered from 1 through N, which corresponds respectively to each of the plurality of fiber cores numbered from 1 through N. The method exposes the photosensitive material from light emitted selectively through the one or more fiber cores. The one or more fiber cores out(s) light respectively through one or more output ends of the fiber cores. Each of the output ends numbered from 1 through N is associated with a pixel numbered respectively from 1 through N.