Patents by Inventor Simon W. Kwan

Simon W. Kwan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for making a cesiated diamond film field emitter and field emitter formed therefrom
    Patent number: 5888113
    Abstract: A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.
    Type: Grant
    Filed: March 27, 1997
    Date of Patent: March 30, 1999
    Assignee: Universities Research Association, Inc.
    Inventors: David F. Anderson, Simon W. Kwan
  • Diamond films treated with alkali-halides
    Patent number: 5619091
    Abstract: A secondary electron emitter is provided and includes a substrate with a diamond film, the diamond film is treated or coated with an alkali-halide.
    Type: Grant
    Filed: October 3, 1994
    Date of Patent: April 8, 1997
    Assignee: Universities Research Association, Inc.
    Inventors: David F. Anderson, Simon W. Kwan