Abstract: A method and structure that forms a multilayer nanoparticle thin film assembly begins by functionalizing a substrate with functional molecules. Next, the invention replaces a stabilizer on a bottom surface of the first nanoparticles with the functional molecules via surface ligand exchange to make a first nanoparticle layer on the substrate. The invention then replaces the stabilizer on a top surface of the first nanoparticle layer with functional molecules via surface ligand exchange. The invention replaces the stabilizer on a bottom surface of the second nanoparticles with the functional molecules via surface ligand exchange to make a second nanoparticle layer on the first nanoparticle layer. Lastly, the invention repeats the previous steps and forms additional nanoparticle layers.

Abstract: A method and structure that forms a multilayer nanoparticle thin film assembly begins by functionalizing a substrate with functional molecules. Next, the invention replaces a stabilizer on a bottom surface of the first nanoparticles with the functional molecules via surface ligand exchange to make a first nanoparticle layer on the substrate. The invention then replaces the stabilizer on a top surface of the first nanoparticle layer with functional molecules via surface ligand exchange. The invention replaces the stabilizer on a bottom surface of the second nanoparticles with the functional molecules via surface ligand exchange to make a second nanoparticle layer on the first nanoparticle layer. Lastly, the invention repeats the previous steps and forms additional nanoparticle layers.

Abstract: A method and structure that forms a multilayer nanoparticle thin film assembly begins by functionalizing a substrate with functional molecules. Next, the invention replaces a stabilizer on a bottom surface of the first nanoparticles with the functional molecules via surface ligand exchange to make a first nanoparticle layer on the substrate. The invention then replaces the stabilizer on a top surface of the first nanoparticle layer with functional molecules via surface ligand exchange. The invention replaces the stabilizer on a bottom surface of the second nanoparticles with the functional molecules via surface ligand exchange to make a second nanoparticle layer on the first nanoparticle layer. Lastly, the invention repeats the previous steps and forms additional nanoparticle layers.

Abstract: A constricted glow discharge chamber and method are disclosed. The polarity and geometry of the constricted glow discharge plasma source is set so that the contamination and energy of the ions discharged from the source are minimized. The several sources can be mounted in parallel and in series to provide a sustained ultra low source of ions in a plasma with contamination below practical detection limits. The source is suitable for applying films of nitrides such as gallium nitride and oxides such as tungsten oxide and for enriching other substances in material surfaces such as oxygen and water vapor, which are difficult process as plasma in any known devices and methods. The source can also be used to assist the deposition of films such as metal films by providing low-energy ions such as argon ions.

Abstract: A process for producing an article with improved ceramic surface properties including providing an article having a ceramic surface, and placing the article onto a conductive substrate holder in a hermetic enclosure. Thereafter a low pressure ambient is provided in the hermetic enclosure. A plasma including ions of solid materials is produced the ceramic surface of the article being at least partially immersed in a macroparticle free region of the plasma. While the article is immersed in the macroparticle free region, a bias of the substrate holder is biased between a low voltage at which material from the plasma condenses on the surface of the article and a high negative voltage at which ions from the plasma are implanted into the article.

Abstract: Surface modification of magnetic recording heads using plasma immersion ion implantation and deposition is disclosed. This method may be carried out using a vacuum arc deposition system with a metallic or carbon cathode. By operating a plasma gun in a long-pulse mode and biasing the substrate holder with short pulses of a high negative voltage, direct ion implantation, recoil implantation, and surface deposition are combined to modify the near-surface regions of the head or substrate in processing times which may be less than 5 min. The modified regions are atomically mixed into the substrate. This surface modification improves the surface smoothness and hardness and enhances the tribological characteristics under conditions of contact-start-stop and continuous sliding. These results are obtained while maintaining original tolerances.

Abstract: A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters.

Abstract: Surface modification of magnetic recording heads using plasma immersion ion implantation and deposition is disclosed. This method may be carried out using a vacuum arc deposition system with a metallic or carbon cathode. By operating a plasma gun in a long-pulse mode and biasing the substrate holder with short pulses of a high negative voltage, direct ion implantation, recoil implantation, and surface deposition are combined to modify the near-surface regions of the head or substrate in processing times which may be less than 5 min. The modified regions are atomically mixed into the substrate. This surface modification improves the surface smoothness and hardness and enhances the tribological characteristics under conditions of contact-start-stop and continuous sliding. These results are obtained while maintaining original tolerances.