Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Abstract: Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.

Abstract: Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.

Abstract: A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

Abstract: In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures include associated reflectors to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). The lamps with such enclosures are mounted for rotation so that the reflectors may alternately shield all or a portion of emitted lamp radiation from the semiconductor substrate.

Abstract: The oxynitride or oxide layer is formed on a semiconductor substrate by subjecting the substrate to UV radiation while exposed to a gaseous atmosphere of O2 and one or more of N2, N2O, H2 and NH3. Thereafter, a silicon nitride layer is formed according to known 4-step gate stack dielectric processing techniques. Alternatively, a 3-step gate stack process is used, namely following UV-oxidation, a further UV-radiation in NH3 may be applied, followed by a rapid thermal anneal process in an inert ambient. By using UV-oxidation as the first step in either a 4-step or 3-step gate stack process, very thin composite dielectric films with equivalent oxide thickness (EOT) below 16 Å and as low as 14.2 Å can be obtained with significant improvement in leakage current density.

Abstract: The oxynitride or oxide layer is formed on a semiconductor substrate by subjecting the substrate to UV radiation while exposed to a gaseous atmosphere of O2 and one or more of N2, N2O, H2 and NH3. Thereafter, a silicon nitride layer is formed according to known 4-step gate stack dielectric processing techniques. Alternatively, a 3-step gate stack process is used, namely following UV-oxidation, a further UV-radiation in NH3 may be applied, followed by a rapid thermal anneal process in an inert ambient. By using UV-oxidation as the first step in either a 4-step or 3-step gate stack process, very thin composite dielectric films with equivalent oxide thickness (EOT) below 16 Å and as low as 14.2 Å can be obtained with significant improvement in leakage current density.

Abstract: In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may include associated reflectors and/or lenses to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). Thin planar quartz liners may also be interposed between the lamps and the substrate. By controlling radiant energy distribution within the chamber, and eliminating thick planar quartz windows commonly used to isolate the lamps in prior art RTP systems, higher processing rates and improved reliability are obtained.

Abstract: In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures include associated reflectors to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). The lamps with such enclosures are mounted for rotation so that the reflectors may alternately shield all or a portion of emitted lamp radiation from the semiconductor substrate.

Abstract: In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may include associated reflectors and/or lenses to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). Thin planar quartz liners may also be interposed between the lamps and the substrate. By controlling radiant energy distribution within the chamber, and eliminating thick planar quartz windows commonly used to isolate the lamps in prior art RTP systems, higher processing rates and improved reliability are obtained.

Abstract: The oxynitride or oxide layer formed on a semiconductor substrate is pre-treated with UV-excited gas (such as chlorine or nitrogen) to improve the layer surface condition and increase the density of nucleation sites for subsequent silicon nitride deposition. The pre-treatment is shown to reduce the root mean square surface roughness of thinner silicon nitride films (with physical thicknesses below 36 Å, or even below 20 Å that are deposited on the oxynitride layer by chemical vapor deposition (CVD).

Abstract: A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.

Abstract: A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.

Abstract: A silicon containing wafer is heated in a rapid thermal processing (RTP) system in a nitrogen containing gas to a temperature an time where a thin oxide film on the wafer surface at least partially decomposes and a thin nitride or oxynitride film grows.

Abstract: A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.

Abstract: A method for curing low k dielectric materials uses very short, relatively high temperature cycles instead of the conventionally used (lower temperature/longer time) thermal cycles. A substrate, such as a semiconductor wafer, coated with a layer of coating material is heated to an elevated temperature at a heating rate of greater than about 20° C. per second. Once the coating material has been converted to a low dielectric constant material with desired properties, the coated substrate is cooled. Alternatively, spike heating raises and promptly lowers the temperature of the coated substrate to effect curing in one or a series of spike heating steps. The method allows for a thinner refractory barrier metal layer thickness to prevent copper diffusion, and uses shorter curing times resulting in higher throughput.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. In accordance with the present invention, the apparatus includes a temperature measuring system for determining the temperature of semiconductor wafers being heated within the apparatus. The temperature measurement system includes a shield member made from, for instance, ceramic which is placed adjacent to the semiconductor wafer being heated. A temperature measuring device, such as a thermocouple, is placed in association with the shield member. As the wafer is heated, the temperature of the shield member is monitored. Based on a predetermined calibration curve, by knowing the temperature of the shield member, the temperature of the semiconductor wafer can be estimated with reasonable accuracy.

Abstract: A system and method for determining the temperature of substrates in a thermal processing chamber in the presence of either an oxidizing atmosphere or a reducing atmosphere is disclosed. Specifically, temperature determinations made in accordance with the present invention are generally for calibrating other temperature sensing devices that may be used in conjunction with the thermal processing chamber. The method of the present invention is generally directed to heating a substrate containing a reactive coating within a thermal processing chamber in an oxidizing atmosphere or reducing atmosphere. As the wafer is heated, the reactive coating reacts with gases contained within the chamber based upon the temperature to which the substrate is exposed. After heated, the thickness of any coating that is formed on the substrate is then measured for determining the temperature to which the substrate was heated.